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Power Field-Effect Transistor, 3.6A I(D), 80V, 0.073ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
73R1193
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Newark | Mosfet Transistor, Channel Type:N Channel, Drain Source Voltage Vds N Channel:80V, Drain Source Voltage Vds P Channel:80V, Continuous Drain Current Id N Channel:3.6A, Continuous Drain Current Id P Channel:3.6A, No. Of Pins:8Pins Rohs Compliant: Yes |Infineon IRF7380TRPBF Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 9745 |
|
$0.5950 / $1.2500 | Buy Now |
DISTI #
31K2220
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Newark | Mosfet Transistor, Channel Type:N Channel, Drain Source Voltage Vds N Channel:80V, Drain Source Voltage Vds P Channel:80V, Continuous Drain Current Id N Channel:3.6A, Continuous Drain Current Id P Channel:3.6A, No. Of Pins:8Pins Rohs Compliant: Yes |Infineon IRF7380TRPBF Min Qty: 4000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.4390 / $0.4500 | Buy Now |
DISTI #
IRF7380TRPBFCT-ND
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DigiKey | MOSFET 2N-CH 80V 3.6A 8SO Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
5712 In Stock |
|
$0.4233 / $1.1300 | Buy Now |
DISTI #
IRF7380TRPBF
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Avnet Americas | Transistor MOSFET Array Dual N-CH 80V 3.6A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7380TRPBF) RoHS: Not Compliant Min Qty: 4000 Package Multiple: 4000 Container: Reel | 12000 |
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RFQ | |
DISTI #
942-IRF7380TRPBF
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Mouser Electronics | MOSFET MOSFT DUAL NCh 80V 3.6A RoHS: Compliant | 17991 |
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$0.4320 / $1.1100 | Buy Now |
DISTI #
E02:0323_00176263
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Arrow Electronics | Trans MOSFET N-CH 80V 3.6A 8-Pin SOIC T/R RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 10 Weeks Date Code: 2408 | Europe - 16000 |
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$0.3842 / $0.4116 | Buy Now |
DISTI #
V72:2272_13889741
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Arrow Electronics | Trans MOSFET N-CH 80V 3.6A 8-Pin SOIC T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2145 Container: Cut Strips | Americas - 2036 |
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$0.4143 / $0.9817 | Buy Now |
DISTI #
70017700
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RS | IRF7380TRPBF Dual N-channel MOSFET Transistor, 3.6 A, 80 V, 8-Pin SOIC | Infineon IRF7380TRPBF RoHS: Not Compliant Min Qty: 20 Package Multiple: 1 Container: Bulk | 0 |
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$0.9600 / $1.1300 | RFQ |
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Future Electronics | Dual N-Channel 80 V 73 mOhm 23 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel | 12000Reel |
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$0.2900 | Buy Now |
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Future Electronics | Dual N-Channel 80 V 73 mOhm 23 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel | 8000Reel |
|
$0.2900 | Buy Now |
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IRF7380TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF7380TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 3.6A I(D), 80V, 0.073ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-G8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 75 mJ | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 80 V | |
Drain Current-Max (ID) | 3.6 A | |
Drain-source On Resistance-Max | 0.073 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MS-012AA | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2 W | |
Pulsed Drain Current-Max (IDM) | 29 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF7380TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7380TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF7380 | Power Field-Effect Transistor, 3.6A I(D), 80V, 0.073ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | Infineon Technologies AG | IRF7380TRPBF vs IRF7380 |
IRF7380PBF | Power Field-Effect Transistor, 3.6A I(D), 80V, 0.073ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | Infineon Technologies AG | IRF7380TRPBF vs IRF7380PBF |
IRF7380TRPBF | Power Field-Effect Transistor, 3.6A I(D), 80V, 0.073ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 | International Rectifier | IRF7380TRPBF vs IRF7380TRPBF |
IRF7380 | Power Field-Effect Transistor, 3.6A I(D), 80V, 0.073ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | IRF7380TRPBF vs IRF7380 |
IRF7380PBF | Power Field-Effect Transistor, 3.6A I(D), 80V, 0.073ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | IRF7380TRPBF vs IRF7380PBF |