Part Details for IRF8327STRPBF by Infineon Technologies AG
Overview of IRF8327STRPBF by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF8327STRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF8327STRPBF
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Avnet Americas | Trans MOSFET N-CH 30V 14A 6-Pin Direct-FET SQ T/R 4.8k - Tape and Reel (Alt: IRF8327STRPBF) RoHS: Compliant Min Qty: 4800 Package Multiple: 4800 Container: Reel | 4800 |
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RFQ | |
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Rochester Electronics | IRF8327 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 1462 |
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$0.5520 / $0.6494 | Buy Now |
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DISTI #
IRF8327STRPBF
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Avnet Americas | Trans MOSFET N-CH 30V 14A 6-Pin Direct-FET SQ T/R 4.8k - Tape and Reel (Alt: IRF8327STRPBF) RoHS: Compliant Min Qty: 4800 Package Multiple: 4800 Container: Reel | 4800 |
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RFQ | |
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Chip1Cloud | MOSFET N-CH 30V 14A SQ | 8490 |
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RFQ | |
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CHIPMALL.COM LIMITED | The StrongIRFET power MOSFET family is optimized for low RDSon and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. | 672 |
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$0.5549 | Buy Now |
Part Details for IRF8327STRPBF
IRF8327STRPBF CAD Models
IRF8327STRPBF Part Data Attributes:
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IRF8327STRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF8327STRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 14A I(D), 30V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 62 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 14 A | |
| Drain-source On Resistance-Max | 0.0073 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XBCC-N3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 42 W | |
| Pulsed Drain Current-Max (IDM) | 110 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF8327STRPBF
This table gives cross-reference parts and alternative options found for IRF8327STRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF8327STRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF8327SPBF | Power Field-Effect Transistor, 14A I(D), 30V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3 | Infineon Technologies AG | IRF8327STRPBF vs IRF8327SPBF |
| IRF8327STRPBF | Power Field-Effect Transistor, 14A I(D), 30V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3 | International Rectifier | IRF8327STRPBF vs IRF8327STRPBF |
| IRF8327SPBF | Power Field-Effect Transistor, 14A I(D), 30V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3 | International Rectifier | IRF8327STRPBF vs IRF8327SPBF |