Datasheets
IRFR010PBF by:

Power Field-Effect Transistor, 8.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3/2

Part Details for IRFR010PBF by Vishay Intertechnologies

Overview of IRFR010PBF by Vishay Intertechnologies

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Price & Stock for IRFR010PBF

Part # Distributor Description Stock Price Buy
DISTI # IRFR010PBF
Avnet Americas Trans MOSFET N-CH 50V 8.2A 3-Pin(2+Tab) DPAK - Bulk (Alt: IRFR010PBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days Container: Bulk 0
  • 3,000 $0.7255
  • 6,000 $0.7022
  • 12,000 $0.6789
  • 18,000 $0.6514
  • 24,000 $0.6303
  • 30,000 $0.6007
  • 300,000 $0.5710
$0.5710 / $0.7255 Buy Now
DISTI # 844-IRFR010PBF
Mouser Electronics MOSFET 60V N-CH HEXFET MOSFET D-PAK RoHS: Compliant 3000
  • 1 $1.4100
  • 10 $0.8730
  • 100 $0.6960
  • 500 $0.6040
  • 1,000 $0.5560
  • 3,000 $0.5550
  • 9,000 $0.5290
$0.5290 / $1.4100 Buy Now
DISTI # V36:1790_09218265
Arrow Electronics Trans MOSFET N-CH 50V 8.2A 3-Pin(2+Tab) DPAK Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks Date Code: 2301 Americas - 2572
  • 0 $0.5066
  • 1 $0.4022
  • 10 $0.3668
  • 75 $0.3631
  • 100 $0.3464
  • 150 $0.3430
  • 500 $0.3326
  • 525 $0.3293
  • 1,000 $0.3241
  • 1,050 $0.3212
  • 2,025 $0.3167
  • 3,000 $0.3155
  • 5,025 $0.3116
  • 9,000 $0.3078
  • 10,050 $0.3039
$0.3039 / $0.5066 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 0
  • 3,000 $0.5640
$0.5640 Buy Now
DISTI # 66227630
Verical Trans MOSFET N-CH 50V 8.2A 3-Pin(2+Tab) DPAK Min Qty: 12 Package Multiple: 1 Date Code: 2301 Americas - 2572
  • 12 $0.3668
  • 75 $0.3631
  • 100 $0.3464
  • 150 $0.3430
  • 500 $0.3326
  • 525 $0.3293
  • 1,000 $0.3241
  • 1,050 $0.3212
  • 2,025 $0.3167
  • 3,000 $0.3155
  • 5,025 $0.3116
  • 9,000 $0.3078
  • 10,050 $0.3039
$0.3039 / $0.3668 Buy Now
DISTI # IRFR010PBF
TTI MOSFET 60V N-CH HEXFET MOSFET D-PAK RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 75 Container: Tube Americas - 0
  • 3,000 $0.5660
  • 12,000 $0.5550
$0.5550 / $0.5660 Buy Now
DISTI # IRFR010PBF
Avnet Americas Trans MOSFET N-CH 50V 8.2A 3-Pin(2+Tab) DPAK - Bulk (Alt: IRFR010PBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days Container: Bulk 0
  • 3,000 $0.7255
  • 6,000 $0.7022
  • 12,000 $0.6789
  • 18,000 $0.6514
  • 24,000 $0.6303
  • 30,000 $0.6007
  • 300,000 $0.5710
$0.5710 / $0.7255 Buy Now
DISTI # IRFR010PBF
TME Transistor: N-MOSFET, unipolar, 50V, 8.2A, Idm: 33A, 25W, DPAK,TO252 Min Qty: 1 0
  • 1 $0.7980
  • 10 $0.5400
  • 75 $0.4870
  • 300 $0.4290
  • 750 $0.3860
  • 3,000 $0.3480
$0.3480 / $0.7980 RFQ
Chip1Cloud MOSFET N-CH 50V 8.2A DPAK 7930
RFQ
DISTI # IRFR010PBF
EBV Elektronik Trans MOSFET N-CH 50V 8.2A 3-Pin(2+Tab) DPAK (Alt: IRFR010PBF) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 1 Weeks, 6 Days EBV - 0
Buy Now

Part Details for IRFR010PBF

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IRFR010PBF Part Data Attributes:

IRFR010PBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRFR010PBF Vishay Intertechnologies Power Field-Effect Transistor, 8.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3/2
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description DPAK-3/2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 18 Weeks
Samacsys Manufacturer Vishay
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 8.2 A
Drain-source On Resistance-Max 0.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 29 pF
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 25 W
Pulsed Drain Current-Max (IDM) 33 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 53 ns
Turn-on Time-Max (ton) 67 ns

Alternate Parts for IRFR010PBF

This table gives cross-reference parts and alternative options found for IRFR010PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR010PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFR010-T1 Power Field-Effect Transistor, 8.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR010PBF vs IRFR010-T1
IRFR010PBF TRANSISTOR 8.2 A, 50 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR010PBF vs IRFR010PBF
IRFR010 Power Field-Effect Transistor, 8.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR010PBF vs IRFR010
IRFR010TRL Power Field-Effect Transistor, 8.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR010PBF vs IRFR010TRL
IRFR010 Power Field-Effect Transistor, 8.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR010PBF vs IRFR010
IRFR010TRLPBF Power Field-Effect Transistor, 8.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3/2 Vishay Intertechnologies IRFR010PBF vs IRFR010TRLPBF
Part Number Description Manufacturer Compare
IRFR010-T1 Power Field-Effect Transistor, 8.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR010PBF vs IRFR010-T1
IRFR010 Power Field-Effect Transistor, 8.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR010PBF vs IRFR010
IRFR010 Power Field-Effect Transistor, 8.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR010PBF vs IRFR010
IRFR010TRL Power Field-Effect Transistor, 8.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR010PBF vs IRFR010TRL
IRFR010TRLPBF Power Field-Effect Transistor, 8.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3/2 Vishay Intertechnologies IRFR010PBF vs IRFR010TRLPBF
IRFR010PBF TRANSISTOR 8.2 A, 50 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR010PBF vs IRFR010PBF

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