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Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRFU120NPBF-ND
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DigiKey | MOSFET N-CH 100V 9.4A IPAK Min Qty: 1 Lead time: 10 Weeks Container: Tube |
5205 In Stock |
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$0.3051 / $0.9200 | Buy Now |
DISTI #
IRFU120NPBF
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Avnet Americas | Trans MOSFET N-CH 100V 9.4A 3-Pin(3+Tab) IPAK - Rail/Tube (Alt: IRFU120NPBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 1000 Lead time: 10 Weeks, 0 Days Container: Tube | 0 |
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$0.2820 / $0.3222 | Buy Now |
DISTI #
942-IRFU120NPBF
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Mouser Electronics | MOSFET MOSFT 100V 9.1A 210mOhm 16.7nC RoHS: Compliant | 3439 |
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$0.3050 / $0.8700 | Buy Now |
DISTI #
70017260
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RS | MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 0.21Ohm, ID 9.4A, I-Pak (TO-251AA),PD 48W | Infineon IRFU120NPBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 0 |
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$0.8100 / $1.0100 | RFQ |
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Future Electronics | Single N-Channel 100 V 0.21 Ohm 25 nC HEXFET® Power Mosfet - TO-251AA RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 75 Container: Tube | 0Tube |
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$0.2950 / $0.3500 | Buy Now |
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Future Electronics | Single N-Channel 100 V 0.21 Ohm 25 nC HEXFET® Power Mosfet - TO-251AA RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 75 Container: Tube | 0Tube |
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$0.2950 / $0.3500 | Buy Now |
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Rochester Electronics | IRFU120 - HEXFET N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 16759 |
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$0.2996 / $0.3525 | Buy Now |
DISTI #
IRFU120NPBF
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Avnet Americas | Trans MOSFET N-CH 100V 9.4A 3-Pin(3+Tab) IPAK - Rail/Tube (Alt: IRFU120NPBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 1000 Lead time: 10 Weeks, 0 Days Container: Tube | 0 |
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$0.2820 / $0.3222 | Buy Now |
DISTI #
IRFU120NPBF
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TME | Transistor: N-MOSFET, unipolar, 100V, 9.1A, 39W, IPAK Min Qty: 1 | 69 |
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$0.4670 / $1.1280 | Buy Now |
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Ameya Holding Limited | Min Qty: 75 | 4231 |
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$0.8758 / $0.9731 | Buy Now |
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IRFU120NPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFU120NPBF
Infineon Technologies AG
Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | IN-LINE, R-PSIP-T3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 10 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 91 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 9.4 A | |
Drain-source On Resistance-Max | 0.21 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-251AA | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 42 W | |
Pulsed Drain Current-Max (IDM) | 38 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFU120NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFU120NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFU120N | Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3 | Infineon Technologies AG | IRFU120NPBF vs IRFU120N |
IRFU120NPBF | Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3 | International Rectifier | IRFU120NPBF vs IRFU120NPBF |