Datasheets
IRFU120NPBF by:

Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3

Part Details for IRFU120NPBF by Infineon Technologies AG

Overview of IRFU120NPBF by Infineon Technologies AG

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Price & Stock for IRFU120NPBF

Part # Distributor Description Stock Price Buy
DISTI # IRFU120NPBF-ND
DigiKey MOSFET N-CH 100V 9.4A IPAK Min Qty: 1 Lead time: 10 Weeks Container: Tube 5205
In Stock
  • 1 $0.9200
  • 75 $0.7568
  • 150 $0.5493
  • 525 $0.4589
  • 1,050 $0.3906
  • 2,025 $0.3479
  • 5,025 $0.3296
  • 10,050 $0.3051
$0.3051 / $0.9200 Buy Now
DISTI # IRFU120NPBF
Avnet Americas Trans MOSFET N-CH 100V 9.4A 3-Pin(3+Tab) IPAK - Rail/Tube (Alt: IRFU120NPBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 1000 Lead time: 10 Weeks, 0 Days Container: Tube 0
  • 3,000 $0.3222
  • 5,000 $0.3122
  • 8,000 $0.3021
  • 15,000 $0.2920
  • 30,000 $0.2820
$0.2820 / $0.3222 Buy Now
DISTI # 942-IRFU120NPBF
Mouser Electronics MOSFET MOSFT 100V 9.1A 210mOhm 16.7nC RoHS: Compliant 3439
  • 1 $0.8700
  • 10 $0.7190
  • 100 $0.5340
  • 500 $0.4480
  • 1,000 $0.3400
  • 3,000 $0.3290
  • 6,000 $0.3280
  • 9,000 $0.3050
$0.3050 / $0.8700 Buy Now
DISTI # 70017260
RS MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 0.21Ohm, ID 9.4A, I-Pak (TO-251AA),PD 48W | Infineon IRFU120NPBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 0
  • 1 $1.0100
  • 5 $0.9600
  • 10 $0.9100
  • 100 $0.8600
  • 250 $0.8100
$0.8100 / $1.0100 RFQ
Future Electronics Single N-Channel 100 V 0.21 Ohm 25 nC HEXFET® Power Mosfet - TO-251AA RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 75 Container: Tube 0
Tube
  • 75 $0.3500
  • 300 $0.3350
  • 1,500 $0.3200
  • 3,000 $0.3150
  • 9,375 $0.2950
$0.2950 / $0.3500 Buy Now
Future Electronics Single N-Channel 100 V 0.21 Ohm 25 nC HEXFET® Power Mosfet - TO-251AA RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 75 Container: Tube 0
Tube
  • 75 $0.3500
  • 300 $0.3350
  • 1,500 $0.3200
  • 3,000 $0.3150
  • 9,375 $0.2950
$0.2950 / $0.3500 Buy Now
Rochester Electronics IRFU120 - HEXFET N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 16759
  • 1 $0.3525
  • 25 $0.3454
  • 100 $0.3313
  • 500 $0.3172
  • 1,000 $0.2996
$0.2996 / $0.3525 Buy Now
DISTI # IRFU120NPBF
Avnet Americas Trans MOSFET N-CH 100V 9.4A 3-Pin(3+Tab) IPAK - Rail/Tube (Alt: IRFU120NPBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 1000 Lead time: 10 Weeks, 0 Days Container: Tube 0
  • 3,000 $0.3222
  • 5,000 $0.3122
  • 8,000 $0.3021
  • 15,000 $0.2920
  • 30,000 $0.2820
$0.2820 / $0.3222 Buy Now
DISTI # IRFU120NPBF
TME Transistor: N-MOSFET, unipolar, 100V, 9.1A, 39W, IPAK Min Qty: 1 69
  • 1 $1.1280
  • 3 $0.6480
  • 10 $0.5320
  • 75 $0.4670
$0.4670 / $1.1280 Buy Now
Ameya Holding Limited   Min Qty: 75 4231
  • 75 $0.9731
  • 375 $0.8758
$0.8758 / $0.9731 Buy Now
DISTI # IRFU120NPBF
Avnet Americas Trans MOSFET N-CH 100V 9.4A 3-Pin(3+Tab) IPAK - Rail/Tube (Alt: IRFU120NPBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 1000 Lead time: 10 Weeks, 0 Days Container: Tube 0
  • 3,000 $0.3222
  • 5,000 $0.3122
  • 8,000 $0.3021
  • 15,000 $0.2920
  • 30,000 $0.2820
$0.2820 / $0.3222 Buy Now
DISTI # TMOSP12475
Rutronik MOSFET 100V 9.1A RoHS: Compliant Min Qty: 75 Package Multiple: 75 Container: Tube Stock DE - 75
Stock HK - 0
Stock US - 0
Stock SG - 0
  • 75 $0.3779
  • 225 $0.3563
  • 450 $0.3347
  • 975 $0.3023
  • 2,325 $0.2915
$0.2915 / $0.3779 Buy Now
CHIPMALL.COM LIMITED MOSFET N-CH 100V 9.4A IPAK 5407
  • 1 $0.4152
  • 10 $0.3378
  • 100 $0.2237
  • 1,000 $0.1945
$0.1945 / $0.4152 Buy Now
DISTI # SP001557678
EBV Elektronik Trans MOSFET N-CH 100V 9.4A 3-Pin(3+Tab) IPAK (Alt: SP001557678) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 1 Weeks, 4 Days EBV - 27000
Buy Now
New Advantage Corporation Single N-Channel 100 V 0.21 Ohm 25 nC HEXFET� Power Mosfet - TO-251AA RoHS: Compliant Min Qty: 1 Package Multiple: 3000 21000
  • 3,000 $0.4537
  • 21,000 $0.4222
$0.4222 / $0.4537 Buy Now

Part Details for IRFU120NPBF

IRFU120NPBF CAD Models

IRFU120NPBF Part Data Attributes

IRFU120NPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRFU120NPBF Infineon Technologies AG Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description IN-LINE, R-PSIP-T3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 10 Weeks
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 91 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 9.4 A
Drain-source On Resistance-Max 0.21 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 42 W
Pulsed Drain Current-Max (IDM) 38 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFU120NPBF

This table gives cross-reference parts and alternative options found for IRFU120NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFU120NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFU120N Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3 Infineon Technologies AG IRFU120NPBF vs IRFU120N
IRFU120NPBF Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3 International Rectifier IRFU120NPBF vs IRFU120NPBF
Part Number Description Manufacturer Compare
IRFU120NPBF Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3 International Rectifier IRFU120NPBF vs IRFU120NPBF
IRFU120N Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3 Infineon Technologies AG IRFU120NPBF vs IRFU120N

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