Datasheets
MMBV2101LT1G by:

Tuning Diodes 30V C2/C30 = 2.5-3.2, SOT-23 (TO-236) 3 LEAD, 3000-REEL

Part Details for MMBV2101LT1G by onsemi

Overview of MMBV2101LT1G by onsemi

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Applications Space Technology Aerospace and Defense

Price & Stock for MMBV2101LT1G

Part # Distributor Description Stock Price Buy
Bristol Electronics   1074
RFQ
Quest Components   859
  • 1 $2.5000
  • 161 $1.0000
  • 801 $0.8750
$0.8750 / $2.5000 Buy Now
Chip1Cloud DIODE TUNING SS 30V SOT23 81700
RFQ

Part Details for MMBV2101LT1G

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MMBV2101LT1G Part Data Attributes

MMBV2101LT1G onsemi
Buy Now Datasheet
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MMBV2101LT1G onsemi Tuning Diodes 30V C2/C30 = 2.5-3.2, SOT-23 (TO-236) 3 LEAD, 3000-REEL
Pbfree Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ON SEMICONDUCTOR
Part Package Code SOT-23 (TO-236) 3 LEAD
Package Description LEAD FREE, PLASTIC, CASE 318-08, TO-236, 3 PIN
Pin Count 3
Manufacturer Package Code 318
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.10.00.80
Samacsys Manufacturer onsemi
Additional Feature HIGH Q, HIGH RELIABILITY
Breakdown Voltage-Min 30 V
Configuration SINGLE
Diode Cap Tolerance 10%
Diode Capacitance Ratio-Min 2.5
Diode Capacitance-Nom 6.8 pF
Diode Element Material SILICON
Diode Type VARIABLE CAPACITANCE DIODE
Frequency Band HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.225 W
Qualification Status Not Qualified
Quality Factor-Min 450
Rep Pk Reverse Voltage-Max 30 V
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Variable Capacitance Diode Classification ABRUPT

Alternate Parts for MMBV2101LT1G

This table gives cross-reference parts and alternative options found for MMBV2101LT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MMBV2101LT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MMBV2101LT1 Tuning Diodes 30V C2/C30 = 2.5-3.2, SOT-23 (TO-236) 3 LEAD, 3000-REEL onsemi MMBV2101LT1G vs MMBV2101LT1
Part Number Description Manufacturer Compare
MMBV2101LT1 HF-UHF BAND, 6.8pF, 30V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, TO-236AB Motorola Mobility LLC MMBV2101LT1G vs MMBV2101LT1
MMVL105GT1 30V, SILICON, VARIABLE CAPACITANCE DIODE, SO-2 Motorola Mobility LLC MMBV2101LT1G vs MMVL105GT1
MMVL2101T1 6.8pF, 30V, SILICON, VARIABLE CAPACITANCE DIODE, PLASTIC, CASE 477-02, 2 PIN onsemi MMBV2101LT1G vs MMVL2101T1
FMMV2101TC Variable Capacitance Diode, 6.8pF C(T), 30V, Silicon, Abrupt Diodes Incorporated MMBV2101LT1G vs FMMV2101TC
MMVL105GT1 Tuning Diode 30 V C3/C25 = 4.0-6.5, SOD-323 2 LEAD, 3000-REEL onsemi MMBV2101LT1G vs MMVL105GT1
MMBV2101LT1 Tuning Diodes 30V C2/C30 = 2.5-3.2, SOT-23 (TO-236) 3 LEAD, 3000-REEL onsemi MMBV2101LT1G vs MMBV2101LT1
MMVL2101T1 6.8pF, 30V, SILICON, VARIABLE CAPACITANCE DIODE, PLASTIC, SOD-323, 2 PIN Motorola Mobility LLC MMBV2101LT1G vs MMVL2101T1

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