Datasheets
NTB23N03R by:

6A, 25V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418AA-01, D2PAK-3

Part Details for NTB23N03R by onsemi

Overview of NTB23N03R by onsemi

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Price & Stock for NTB23N03R

Part # Distributor Description Stock Price Buy
DISTI # 74AK0724
Newark 6A, 25V, 0.06Ohm, N-Channel Power Mosfet |Onsemi NTB23N03R Min Qty: 2470 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1,000 $0.1690
  • 2,500 $0.1370
  • 10,000 $0.1330
$0.1330 / $0.1690 Buy Now
Rochester Electronics NTB23N03R - 6A, 25V, 0.06ohm, N-Channel Power MOSFET RoHS: Not Compliant Status: Obsolete Min Qty: 1 8250
  • 1 $0.1460
  • 25 $0.1431
  • 100 $0.1372
  • 500 $0.1314
  • 1,000 $0.1241
$0.1241 / $0.1460 Buy Now
DISTI # 4184639
Farnell 6A, 25V, 0.06OHM, N-CHANNEL POWER MOSFET RoHS: Compliant Min Qty: 2500 Lead time: 3 Weeks, 1 Days Container: Each 8250
  • 2,500 $0.2043
$0.2043 Buy Now

Part Details for NTB23N03R

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NTB23N03R Part Data Attributes

NTB23N03R onsemi
Buy Now Datasheet
Compare Parts:
NTB23N03R onsemi 6A, 25V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418AA-01, D2PAK-3
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Package Description D2PAK-3
Pin Count 3
Manufacturer Package Code CASE 418AA-01
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 4 Weeks
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 25 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 0.06 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 60 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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