Parametric results for: NTB23N03R under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

DRAIN 6

6 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 6

6 hits Apply

DS Breakdown Voltage-Min (1)

25 V 6

6 hits Apply

Drain Current-Max (ID) (1)

6 A 6

6 hits Apply

Drain-source On Resistance-Max (1)

60 mΩ 6

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

R-PSSO-G2 6

6 hits Apply

e0 4 e3 2

6 hits Apply

Manufacturer (2)

onsemi 2 Rochester Electronics LLC 4

6 hits Apply

1 3 NOT SPECIFIED 2

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

2 6

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 2

6 hits Apply

PLASTIC/EPOXY 6

6 hits Apply

RECTANGULAR 6

6 hits Apply

SMALL OUTLINE 6

6 hits Apply

Active 4 Obsolete 2

6 hits Apply

No 4 Yes 1

6 hits Apply

235 3 240 1 265 1 NOT SPECIFIED 1

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply