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Part Details for NTBG020N120SC1 by onsemi
Overview of NTBG020N120SC1 by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Automotive
Motor control systems
Price & Stock for NTBG020N120SC1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
5556-NTBG020N120SC1CT-ND
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DigiKey | SICFET N-CH 1200V 8.6A/98A D2PAK Min Qty: 1 Lead time: 17 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
733 In Stock |
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$24.8953 / $37.5400 | Buy Now |
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DISTI #
NTBG020N120SC1
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Avnet Americas | Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, D2PAK-7L - Tape and Reel (Alt: NTBG020N120SC1) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Container: Reel | 32001600 Factory Stock |
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RFQ | |
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DISTI #
863-NTBG020N120SC1
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Mouser Electronics | MOSFET SIC MOS 20MW 1200V RoHS: Compliant | 1740 |
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$25.4100 / $36.2100 | Buy Now |
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Future Electronics | NTBG Series 1200 V 28 mOhm 3.7 W Surface Mount N-Channel Power Mosfet - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 | 35 |
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$24.4100 / $25.6300 | Buy Now |
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Future Electronics | NTBG Series 1200 V 28 mOhm 3.7 W Surface Mount N-Channel Power Mosfet - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 | 30 |
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$24.4100 / $25.6300 | Buy Now |
|
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Future Electronics | NTBG Series 1200 V 28 mOhm 3.7 W Surface Mount N-Channel Power Mosfet - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
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$24.4100 | Buy Now |
|
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Future Electronics | NTBG Series 1200 V 28 mOhm 3.7 W Surface Mount N-Channel Power Mosfet - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
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$24.4100 | Buy Now |
|
DISTI #
NTBG020N120SC1
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Avnet Americas | Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, D2PAK-7L - Tape and Reel (Alt: NTBG020N120SC1) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Container: Reel | 32001600 Factory Stock |
|
RFQ | |
|
DISTI #
NTBG020N120SC1
|
Avnet Americas | Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, D2PAK-7L - Tape and Reel (Alt: NTBG020N120SC1) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Container: Reel | 32001600 Factory Stock |
|
RFQ | |
|
DISTI #
NTBG020N120SC1
|
Avnet Asia | Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, D2PAK-7L (Alt: NTBG020N120SC1) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days | 32 |
|
$24.0165 / $29.1629 | Buy Now |
Part Details for NTBG020N120SC1
NTBG020N120SC1 CAD Models
NTBG020N120SC1 Part Data Attributes
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NTBG020N120SC1
onsemi
Buy Now
Datasheet
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Compare Parts:
NTBG020N120SC1
onsemi
Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, D2PAK-7L, 800-REEL
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | D2PAK-7 | |
| Manufacturer Package Code | 418BJ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 49 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 264 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 98 A | |
| Drain-source On Resistance-Max | 0.028 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 24 pF | |
| JEDEC-95 Code | TO-263CB | |
| JESD-30 Code | R-PSSO-G7 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 7 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 468 W | |
| Pulsed Drain Current-Max (IDM) | 392 A | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE | |
| Turn-off Time-Max (toff) | 94 ns | |
| Turn-on Time-Max (ton) | 106 ns |
Alternate Parts for NTBG020N120SC1
This table gives cross-reference parts and alternative options found for NTBG020N120SC1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTBG020N120SC1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NVBG020N120SC1 | Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200V, M1, D2PAK−7L, 800-REEL, Automotive Qualified | onsemi | NTBG020N120SC1 vs NVBG020N120SC1 |