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Silicon Carbide (SiC) MOSFET - EliteSiC, 31 mohm, 650 V, M2, D2PAK-7L, 800-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
5556-NTBG045N065SC1CT-ND
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DigiKey | SILICON CARBIDE MOSFET, NCHANNEL Min Qty: 1 Lead time: 17 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
463 In Stock |
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$8.0685 / $11.6900 | Buy Now |
DISTI #
NTBG045N065SC1
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Avnet Americas | Silicon Carbide (SiC) MOSFET - EliteSiC, 31 mohm, 650 V, M2, D2PAK-7L - Tape and Reel (Alt: NTBG045N065SC1) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Container: Reel | 240024000 Factory Stock |
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RFQ | |
DISTI #
81AJ0220
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Avnet Americas | Silicon Carbide (SiC) MOSFET - EliteSiC, 31 mohm, 650 V, M2, D2PAK-7L - Bulk (Alt: 81AJ0220) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 22 Weeks, 6 Days Container: Bulk | 64 Partner Stock |
|
$9.1500 / $12.8400 | Buy Now |
DISTI #
863-NTBG045N065SC1
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Mouser Electronics | MOSFET SIC MOS D2PAK-7L 650V RoHS: Compliant | 32 |
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$7.6200 / $11.3200 | Buy Now |
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Future Electronics | NTBG045N065SC1 Series N-Channel 650 V 50 mOhm Silicon Carbide MOSFET - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 | 50 |
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$7.4800 / $7.8500 | Buy Now |
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Future Electronics | NTBG045N065SC1 Series N-Channel 650 V 50 mOhm Silicon Carbide MOSFET - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 | 30 |
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$7.4800 / $7.8500 | Buy Now |
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Future Electronics | NTBG045N065SC1 Series N-Channel 650 V 50 mOhm Silicon Carbide MOSFET - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
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$7.4800 | Buy Now |
DISTI #
NTBG045N065SC1
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Avnet Americas | Silicon Carbide (SiC) MOSFET - EliteSiC, 31 mohm, 650 V, M2, D2PAK-7L - Tape and Reel (Alt: NTBG045N065SC1) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Container: Reel | 240024000 Factory Stock |
|
RFQ | |
DISTI #
81AJ0220
|
Avnet Americas | Silicon Carbide (SiC) MOSFET - EliteSiC, 31 mohm, 650 V, M2, D2PAK-7L - Bulk (Alt: 81AJ0220) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 22 Weeks, 6 Days Container: Bulk | 64 Partner Stock |
|
$9.1500 / $12.8400 | Buy Now |
|
Ameya Holding Limited | Min Qty: 1 | 734 |
|
$13.2738 / $14.7485 | Buy Now |
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NTBG045N065SC1
onsemi
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Datasheet
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Compare Parts:
NTBG045N065SC1
onsemi
Silicon Carbide (SiC) MOSFET - EliteSiC, 31 mohm, 650 V, M2, D2PAK-7L, 800-REEL
|
Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Manufacturer Package Code | 418BJ | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 38 Weeks | |
Date Of Intro | 2020-03-23 | |
Samacsys Manufacturer | onsemi | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 650 V | |
Drain Current-Max (ID) | 73.7 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 13.78 pF | |
JEDEC-95 Code | TO-263CB | |
JESD-30 Code | R-PSSO-G7 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 7 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 425 W | |
Pulsed Drain Current-Max (IDM) | 315 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Element Material | SILICON CARBIDE |