Parametric results for: NTBG045N065SC1 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 1

1 hit Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

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DS Breakdown Voltage-Min (1)

650 V 1

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Drain Current-Max (ID) (1)

73.7 A 1

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METAL-OXIDE SEMICONDUCTOR 1

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13.78 pF 1

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TO-263CB 1

1 hit Apply

R-PSSO-G7 1

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e3 1

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Manufacturer (1)

onsemi 1

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1 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

7 1

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ENHANCEMENT MODE 1

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175.0 °C 1

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-55.0 °C 1

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PLASTIC/EPOXY 1

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RECTANGULAR 1

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SMALL OUTLINE 1

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Active 1

1 hit Apply

Yes 1

1 hit Apply

245 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

425 W 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply