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Part Details for NTBGS6D5N15MC by onsemi
Overview of NTBGS6D5N15MC by onsemi
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Internet of Things (IoT)
Smart Cities
Price & Stock for NTBGS6D5N15MC
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
488-NTBGS6D5N15MCCT-ND
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DigiKey | MOSFET N-CH 150V 15A/121A D2PAK Min Qty: 1 Lead time: 24 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1047 In Stock |
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$3.0290 / $6.2700 | Buy Now |
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DISTI #
NTBGS6D5N15MC
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Avnet Americas | Power MOSFET, N Channel, 150 V, 121 A, 0.0055 ohm, TO-263 (D2PAK), Surface Mount - Tape and Reel (Alt: NTBGS6D5N15MC) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 24 Weeks, 0 Days Container: Reel | 0 |
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$3.1396 / $3.5145 | Buy Now |
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DISTI #
863-NTBGS6D5N15MC
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Mouser Electronics | MOSFET PTNG 150V IN SUZHOU D2PAK7L FOR INDUSTRIAL RoHS: Compliant | 199 |
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$3.0200 / $5.7100 | Buy Now |
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Future Electronics | MOSFET PTNG 150V IN SUZHOU D2PA RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
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$3.0800 | Buy Now |
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Rochester Electronics | NTBGS6D5N - MOSFET - Power, Single N-Channel, D2PAK7 150 V, 7 m, 121 A RoHS: Compliant Status: Active Min Qty: 1 | 11200 |
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$2.9000 / $3.4200 | Buy Now |
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DISTI #
NTBGS6D5N15MC
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Avnet Americas | Power MOSFET, N Channel, 150 V, 121 A, 0.0055 ohm, TO-263 (D2PAK), Surface Mount - Tape and Reel (Alt: NTBGS6D5N15MC) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 24 Weeks, 0 Days Container: Reel | 0 |
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$3.1396 / $3.5145 | Buy Now |
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Ameya Holding Limited | Min Qty: 10 | 1490 |
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$6.0381 / $6.4177 | Buy Now |
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DISTI #
NTBGS6D5N15MC
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Avnet Americas | Power MOSFET, N Channel, 150 V, 121 A, 0.0055 ohm, TO-263 (D2PAK), Surface Mount - Tape and Reel (Alt: NTBGS6D5N15MC) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 24 Weeks, 0 Days Container: Reel | 0 |
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$3.1396 / $3.5145 | Buy Now |
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DISTI #
NTBGS6D5N15MC
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Avnet Silica | Power MOSFET, N Channel, 150 V, 121 A, 0.0055 ohm, TO-263 (D2PAK), Surface Mount (Alt: NTBGS6D5N15MC) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 3 Weeks, 4 Days | Silica - 0 |
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Buy Now | |
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DISTI #
NTBGS6D5N15MC
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EBV Elektronik | Power MOSFET, N Channel, 150 V, 121 A, 0.0055 ohm, TO-263 (D2PAK), Surface Mount (Alt: NTBGS6D5N15MC) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 3 Weeks, 5 Days | EBV - 0 |
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Buy Now |
Part Details for NTBGS6D5N15MC
NTBGS6D5N15MC CAD Models
NTBGS6D5N15MC Part Data Attributes
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NTBGS6D5N15MC
onsemi
Buy Now
Datasheet
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Compare Parts:
NTBGS6D5N15MC
onsemi
Power MOSFET, 150 V, 6.5 mΩ, A, Single N−Channel, D2PAK7, 800-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | D2PAK-7/6 | |
| Manufacturer Package Code | 418AY | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 22 Weeks | |
| Date Of Intro | 2019-12-18 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 180 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 121 A | |
| Drain-source On Resistance-Max | 0.007 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 10.3 pF | |
| JEDEC-95 Code | TO-263CB | |
| JESD-30 Code | R-PSSO-G6 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 238 W | |
| Pulsed Drain Current-Max (IDM) | 1800 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for NTBGS6D5N15MC
This table gives cross-reference parts and alternative options found for NTBGS6D5N15MC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTBGS6D5N15MC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPI051N15N5 | Power Field-Effect Transistor, 120A I(D), 150V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, I2PAK-3 | Infineon Technologies AG | NTBGS6D5N15MC vs IPI051N15N5 |
| IPB048N15N5LF | Power Field-Effect Transistor, | Infineon Technologies AG | NTBGS6D5N15MC vs IPB048N15N5LF |
| IPP051N15N5 | Power Field-Effect Transistor, 120A I(D), 150V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Infineon Technologies AG | NTBGS6D5N15MC vs IPP051N15N5 |