Part Details for NTNS3C68NZT5G by onsemi
Overview of NTNS3C68NZT5G by onsemi
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Price & Stock for NTNS3C68NZT5G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
2156-NTNS3C68NZT5G-488-ND
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DigiKey | SINGLE N-CHANNEL SMALL SIGNAL MO Min Qty: 2962 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
293117 In Stock |
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$0.1000 | Buy Now |
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Rochester Electronics | NTNS3C68NZ - Single N-Channel Small Signal MOSFET 12V, 758mA RoHS: Compliant Status: Active Min Qty: 1 | 293117 |
|
$0.0869 / $0.1022 | Buy Now |
|
DISTI #
4280986
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Farnell | MISCELLANEOUS MOSFETS RoHS: Compliant Min Qty: 8000 Lead time: 3 Weeks, 1 Days Container: Each | 293117 |
|
$0.0986 | Buy Now |
Part Details for NTNS3C68NZT5G
NTNS3C68NZT5G CAD Models
NTNS3C68NZT5G Part Data Attributes
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NTNS3C68NZT5G
onsemi
Buy Now
Datasheet
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NTNS3C68NZT5G
onsemi
Single N−Channel Small Signal MOSFET 12V, 758mA, 160mΩ, 8000-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | SOT-883, XDFN-3 | |
| Manufacturer Package Code | 506CB | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR | |
| DS Breakdown Voltage-Min | 12 V | |
| Drain Current-Max (ID) | 0.758 A | |
| Drain-source On Resistance-Max | 0.16 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PBCC-N3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.156 W | |
| Surface Mount | YES | |
| Terminal Finish | Nickel/Gold/Palladium (Ni/Au/Pd) | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |