Part Details for RGS60TS65DC11 by ROHM Semiconductor
Overview of RGS60TS65DC11 by ROHM Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Aerospace and Defense
Price & Stock for RGS60TS65DC11
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
RGS60TS65DC11
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Avnet Silica | ROHRGS60TS65DC11 (Alt: RGS60TS65DC11) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 13 Weeks, 0 Days | Silica - 0 |
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Part Details for RGS60TS65DC11
RGS60TS65DC11 CAD Models
RGS60TS65DC11 Part Data Attributes:
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RGS60TS65DC11
ROHM Semiconductor
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Datasheet
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RGS60TS65DC11
ROHM Semiconductor
Insulated Gate Bipolar Transistor,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROHM CO LTD | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Date Of Intro | 2016-08-08 | |
Collector Current-Max (IC) | 56 A | |
Collector-Emitter Voltage-Max | 650 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Thr Voltage-Max | 7 V | |
Gate-Emitter Voltage-Max | 30 V | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 223 W | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 290 ns | |
Turn-on Time-Nom (ton) | 46 ns | |
VCEsat-Max | 2.1 V |