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Transistors / Power Field-Effect Transistors / RQ3E120GNTB
Datasheets
RQ3E120GNTB by: ROHM Semiconductor

Power Field-Effect Transistor, 12A I(D), 30V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSMT8, 8 PIN

Part Details for RQ3E120GNTB by ROHM Semiconductor

Overview of RQ3E120GNTB by ROHM Semiconductor

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Applications Space Technology Aerospace and Defense Energy and Power Systems

Price & Stock for RQ3E120GNTB

Part # Distributor Description Stock Price Buy
DISTI # RQ3E120GNTBCT-ND
DigiKey MOSFET N-CH 30V 12A 8HSMT Min Qty: 1 Lead time: 21 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 13560
In Stock
  • 1 $0.5000
  • 10 $0.4310
  • 100 $0.2994
  • 500 $0.2337
  • 1,000 $0.1900
  • 3,000 $0.1698
  • 6,000 $0.1612
  • 9,000 $0.1497
  • 30,000 $0.1462
$0.1462 / $0.5000 Buy Now
DISTI # RQ3E120GNTB
Avnet Americas Trans N-CH 30V ±12A 8-Pin HSMT T/R - Tape and Reel (Alt: RQ3E120GNTB) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days Container: Reel 6000
RFQ
DISTI # 755-RQ3E120GNTB
Mouser Electronics MOSFET 4.5V Drive Nch MOSFET RoHS: Compliant 56794
  • 1 $0.5000
  • 10 $0.4310
  • 100 $0.2990
  • 500 $0.2340
  • 1,000 $0.1900
  • 3,000 $0.1610
  • 9,000 $0.1490
  • 24,000 $0.1460
  • 45,000 $0.1430
$0.1430 / $0.5000 Buy Now
Future Electronics RQ3E120GN Series 30 V 27 A 15 W Surface Mount N-Channel Power Mosfet - HSMT-8 RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.1560
  • 6,000 $0.1530
  • 9,000 $0.1510
  • 12,000 $0.1500
  • 15,000 $0.1460
$0.1460 / $0.1560 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 12A I(D), 30V, 0.0118OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 2400
  • 1 $0.8600
  • 466 $0.3440
  • 2,327 $0.3010
$0.3010 / $0.8600 Buy Now
DISTI # RQ3E120GNTB
Avnet Americas Trans N-CH 30V ±12A 8-Pin HSMT T/R - Tape and Reel (Alt: RQ3E120GNTB) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days Container: Reel 6000
RFQ
DISTI # RQ3E120GNTB
TME Transistor: N-MOSFET, unipolar, 30V, 27A, Idm: 48A, 15W, HSMT8 Min Qty: 3 2978
  • 3 $0.2860
  • 25 $0.2700
  • 100 $0.2370
  • 500 $0.2150
  • 3,000 $0.2000
$0.2000 / $0.2860 Buy Now
Ameya Holding Limited   Min Qty: 1 500-Authorized Distributor
  • 1 $0.3175
  • 10 $0.2988
  • 25 $0.2801
  • 100 $0.2615
  • 250 $0.2428
  • 500 $0.2241
  • 1,000 $0.2054
  • 3,000 $0.1868
$0.1868 / $0.3175 Buy Now
DISTI # RQ3E120GNTB
Avnet Americas Trans N-CH 30V ±12A 8-Pin HSMT T/R - Tape and Reel (Alt: RQ3E120GNTB) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days Container: Reel 6000
RFQ
DISTI # RQ3E120GNTB
Avnet Asia Trans N-CH 30V ±12A 8-Pin HSMT T/R (Alt: RQ3E120GNTB) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days 0
RFQ

Part Details for RQ3E120GNTB

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RQ3E120GNTB Part Data Attributes

Parametric Data
RQ3E120GNTB ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
RQ3E120GNTB ROHM Semiconductor Power Field-Effect Transistor, 12A I(D), 30V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSMT8, 8 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description SMALL OUTLINE, R-PDSO-F5
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 21 Weeks
Samacsys Manufacturer ROHM Semiconductor
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.0118 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 48 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for RQ3E120GNTB

This table gives cross-reference parts and alternative options found for RQ3E120GNTB. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RQ3E120GNTB, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF7413 Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 Infineon Technologies AG RQ3E120GNTB vs IRF7413
IRF7413TR Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 International Rectifier RQ3E120GNTB vs IRF7413TR
IRF7413GPBF Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 Infineon Technologies AG RQ3E120GNTB vs IRF7413GPBF
RSS130N03TB Power Field-Effect Transistor, 13A I(D), 30V, 0.0111ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 ROHM Semiconductor RQ3E120GNTB vs RSS130N03TB
IRF7413PBF-1 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Infineon Technologies AG RQ3E120GNTB vs IRF7413PBF-1
IRF7811WTRPBF Power Field-Effect Transistor, 14A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier RQ3E120GNTB vs IRF7811WTRPBF
IRF7413ZGPBF Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 Infineon Technologies AG RQ3E120GNTB vs IRF7413ZGPBF
IRF7811W Power Field-Effect Transistor, 14A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 International Rectifier RQ3E120GNTB vs IRF7811W
IRF7413Z Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier RQ3E120GNTB vs IRF7413Z
IRF7413Z Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 Infineon Technologies AG RQ3E120GNTB vs IRF7413Z

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