Datasheets
IRF7811W by:

Power Field-Effect Transistor, 14A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8

Part Details for IRF7811W by International Rectifier

Overview of IRF7811W by International Rectifier

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Price & Stock for IRF7811W

Part # Distributor Description Stock Price Buy
Bristol Electronics   86
RFQ
Bristol Electronics   Min Qty: 2 75
  • 2 $3.0000
  • 8 $2.2500
  • 24 $1.8750
$1.8750 / $3.0000 Buy Now
Quest Components MOSFET Transistor, N-Channel, SO 17
  • 1 $1.5000
  • 4 $1.2500
  • 13 $0.9000
$0.9000 / $1.5000 Buy Now
Quest Components MOSFET Transistor, N-Channel, SO 36
  • 1 $1.7500
  • 4 $1.4000
  • 15 $1.0500
$1.0500 / $1.7500 Buy Now
Quest Components MOSFET Transistor, N-Channel, SO 60
  • 1 $4.0000
  • 9 $2.5000
  • 31 $1.5000
$1.5000 / $4.0000 Buy Now

Part Details for IRF7811W

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IRF7811W Part Data Attributes:

IRF7811W International Rectifier
Buy Now Datasheet
Compare Parts:
IRF7811W International Rectifier Power Field-Effect Transistor, 14A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code SOIC
Package Description SOP-8
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.012 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.1 W
Pulsed Drain Current-Max (IDM) 109 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF7811W

This table gives cross-reference parts and alternative options found for IRF7811W. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7811W, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF7811WPBF Power Field-Effect Transistor, 14A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 International Rectifier IRF7811W vs IRF7811WPBF
IRF7811WTRPBF Power Field-Effect Transistor, 14A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7811W vs IRF7811WTRPBF
Part Number Description Manufacturer Compare
UPA2701GR 14A, 30V, 0.0137ohm, N-CHANNEL, Si, POWER, MOSFET, POWER, SOP-8 Renesas Electronics Corporation IRF7811W vs UPA2701GR
IRF7413ZGPBF Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 Infineon Technologies AG IRF7811W vs IRF7413ZGPBF
IRF7413UTRPBF Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 International Rectifier IRF7811W vs IRF7413UTRPBF
IRF7413Z Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7811W vs IRF7413Z
IRF7811WTRPBF Power Field-Effect Transistor, 14A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7811W vs IRF7811WTRPBF
FDS6294 Power Field-Effect Transistor, 13A I(D), 30V, 0.0113ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation IRF7811W vs FDS6294
IRF7413PBF Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 Infineon Technologies AG IRF7811W vs IRF7413PBF
IRF7413UPBF Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7811W vs IRF7413UPBF
IRF7811WPBF Power Field-Effect Transistor, 14A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 International Rectifier IRF7811W vs IRF7811WPBF
IRF7805PBF Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 Infineon Technologies AG IRF7811W vs IRF7805PBF

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