Part Details for RS1E150GNTB by ROHM Semiconductor
Overview of RS1E150GNTB by ROHM Semiconductor
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for RS1E150GNTB
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
RS1E150GNTBCT-ND
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DigiKey | MOSFET N-CH 30V 15A 8HSOP Min Qty: 1 Lead time: 21 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
2280 In Stock |
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$0.1911 / $0.6600 | Buy Now |
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DISTI #
RS1E150GNTB
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Avnet Americas | 4.5V DRIVE NCH MOSFET HSOP8(SINGLE) NCH DISCRETE - Tape and Reel (Alt: RS1E150GNTB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
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$0.1937 / $0.2205 | Buy Now |
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DISTI #
755-RS1E150GNTB
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Mouser Electronics | MOSFET 4.5V Drive Nch MOSFET RoHS: Compliant | 2934 |
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$0.1910 / $0.6600 | Buy Now |
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Future Electronics | 30V, 40A, 8.8MOHM, N-CHANNEL, HSOP8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.1910 / $0.2050 | Buy Now |
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Bristol Electronics | Min Qty: 10 | 195 |
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$0.1969 / $0.5250 | Buy Now |
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Quest Components | 156 |
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$0.3500 / $0.7000 | Buy Now | |
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Quest Components | 2000 |
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$0.3580 / $0.8950 | Buy Now | |
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DISTI #
RS1E150GNTB
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Avnet Americas | 4.5V DRIVE NCH MOSFET HSOP8(SINGLE) NCH DISCRETE - Tape and Reel (Alt: RS1E150GNTB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
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$0.1937 / $0.2205 | Buy Now |
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DISTI #
RS1E150GNTB
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TME | Transistor: N-MOSFET, unipolar, 30V, 40A, Idm: 60A, 22W, HSOP8 Min Qty: 1 | 0 |
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$0.2750 / $0.8640 | RFQ |
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Ameya Holding Limited | Transistors FETs, MOSFETs Single Min Qty: 1 | 2360-Authorized Distributor |
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$0.1880 / $0.5600 | Buy Now |
Part Details for RS1E150GNTB
RS1E150GNTB CAD Models
RS1E150GNTB Part Data Attributes
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RS1E150GNTB
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
RS1E150GNTB
ROHM Semiconductor
Power Field-Effect Transistor, 15A I(D), 30V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROHM CO LTD | |
| Package Description | HSOP-8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | ROHM Semiconductor | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 15 A | |
| Drain-source On Resistance-Max | 0.0114 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 60 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for RS1E150GNTB
This table gives cross-reference parts and alternative options found for RS1E150GNTB. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RS1E150GNTB, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SI7726DN-T1-GE3 | Power Field-Effect Transistor, 14.9A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8 | Vishay Intertechnologies | RS1E150GNTB vs SI7726DN-T1-GE3 |
| SIS782DN-T1-GE3 | Power Field-Effect Transistor, 16A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 1212-8, POWERPAK-8 | Vishay Intertechnologies | RS1E150GNTB vs SIS782DN-T1-GE3 |
| AM7304N | Power Field-Effect Transistor, 16A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3 X 3 MM, HALOGEN FREE AND ROHS COMPLIANT, DFN-8 | Analog Power | RS1E150GNTB vs AM7304N |
| BSC094N03SGAUMA1 | Power Field-Effect Transistor, 14.6A I(D), 30V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | RS1E150GNTB vs BSC094N03SGAUMA1 |
| STL56N3LLH5 | N-channel 30 V, 0.0076 Ohm typ., 56 A STripFET H5 Power MOSFET in a PowerFLAT 5x6 package | STMicroelectronics | RS1E150GNTB vs STL56N3LLH5 |