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Transistors / Power Field-Effect Transistors / RS1E350GNTB
Datasheets
RS1E350GNTB by: ROHM Semiconductor

Power Field-Effect Transistor, 35A I(D), 30V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOP-8

Part Details for RS1E350GNTB by ROHM Semiconductor

Overview of RS1E350GNTB by ROHM Semiconductor

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Applications Energy and Power Systems Renewable Energy

Price & Stock for RS1E350GNTB

Part # Distributor Description Stock Price Buy
DISTI # RS1E350GNTBCT-ND
DigiKey MOSFET N-CH 30V 35A/80A 8HSOP Min Qty: 1 Lead time: 21 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 2500
In Stock
  • 1 $2.5800
  • 10 $2.1400
  • 100 $1.7036
  • 500 $1.4415
  • 1,000 $1.2231
  • 2,500 $1.1620
  • 5,000 $1.1183
$1.1183 / $2.5800 Buy Now
DISTI # RS1E350GNTB
Avnet Americas Transistor Power MOSFET N-CH 30V 80A 8-Pin HSOP Emboss T/R - Tape and Reel (Alt: RS1E350GNTB) Min Qty: 2500 Package Multiple: 2500 Lead time: 21 Weeks, 0 Days Container: Reel 0
  • 2,500 $1.2802
  • 5,000 $1.2543
  • 10,000 $1.2283
  • 15,000 $1.2024
  • 20,000 $1.1764
  • 25,000 $1.1504
  • 250,000 $1.1245
$1.1245 / $1.2802 Buy Now
DISTI # 755-RS1E350GNTB
Mouser Electronics MOSFET 4.5V Drive Nch MOSFET. Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in th RoHS: Compliant 902
  • 1 $2.5800
  • 10 $2.1400
  • 100 $1.7100
  • 250 $1.6400
  • 500 $1.4400
  • 1,000 $1.2300
  • 2,500 $1.1600
  • 5,000 $1.1100
$1.1100 / $2.5800 Buy Now
Future Electronics 30V, 80A, 1.92MOHM, N-CHANNEL, HSOP8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $1.1400
$1.1400 Buy Now
Quest Components   38
  • 1 $3.5640
  • 9 $2.6136
  • 30 $2.3760
$2.3760 / $3.5640 Buy Now
DISTI # RS1E350GNTB
Avnet Americas Transistor Power MOSFET N-CH 30V 80A 8-Pin HSOP Emboss T/R - Tape and Reel (Alt: RS1E350GNTB) Min Qty: 2500 Package Multiple: 2500 Lead time: 21 Weeks, 0 Days Container: Reel 0
  • 2,500 $1.2802
  • 5,000 $1.2543
  • 10,000 $1.2283
  • 15,000 $1.2024
  • 20,000 $1.1764
  • 25,000 $1.1504
  • 250,000 $1.1245
$1.1245 / $1.2802 Buy Now
Ameya Holding Limited Transistors FETs, MOSFETs Single Min Qty: 1 100-Authorized Distributor
  • 1 $2.2000
  • 10 $1.8700
  • 100 $1.4000
  • 500 $1.2300
  • 1,000 $1.0500
  • 2,500 $1.0000
$1.0000 / $2.2000 Buy Now
DISTI # RS1E350GNTB
Avnet Americas Transistor Power MOSFET N-CH 30V 80A 8-Pin HSOP Emboss T/R - Tape and Reel (Alt: RS1E350GNTB) Min Qty: 2500 Package Multiple: 2500 Lead time: 21 Weeks, 0 Days Container: Reel 0
  • 2,500 $1.2802
  • 5,000 $1.2543
  • 10,000 $1.2283
  • 15,000 $1.2024
  • 20,000 $1.1764
  • 25,000 $1.1504
  • 250,000 $1.1245
$1.1245 / $1.2802 Buy Now
ComSIT USA Electronic Component RoHS: Compliant Europe - 99
RFQ
DISTI # RS1E350GNTB
Avnet Asia Transistor Power MOSFET N-CH 30V 80A 8-Pin HSOP Emboss T/R (Alt: RS1E350GNTB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 24 Weeks, 0 Days 0
RFQ

Part Details for RS1E350GNTB

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RS1E350GNTB Part Data Attributes

Parametric Data
RS1E350GNTB ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
RS1E350GNTB ROHM Semiconductor Power Field-Effect Transistor, 35A I(D), 30V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOP-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description HSOP-8
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 21 Weeks
Samacsys Manufacturer ROHM Semiconductor
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 35 A
Drain-source On Resistance-Max 0.002 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 140 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for RS1E350GNTB

This table gives cross-reference parts and alternative options found for RS1E350GNTB. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RS1E350GNTB, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SIRA04DP-T1-GE3 Power Field-Effect Transistor, 40A I(D), 30V, 0.00215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALEGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 Vishay Intertechnologies RS1E350GNTB vs SIRA04DP-T1-GE3
SISA04DN-T1-GE3 Power Field-Effect Transistor, 40A I(D), 30V, 0.00215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALEGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8 Vishay Intertechnologies RS1E350GNTB vs SISA04DN-T1-GE3
TSM020N03PQ56RLG Power Field-Effect Transistor, 38A I(D), 30V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ANTIMONY AND HALOGEN FREE, ROHS COMPLIANT, PLASTIC, DFN56, 8 PIN Taiwan Semiconductor RS1E350GNTB vs TSM020N03PQ56RLG

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