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Part Details for SI3410DV-T1-GE3 by Vishay Intertechnologies
Overview of SI3410DV-T1-GE3 by Vishay Intertechnologies
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
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Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Price & Stock for SI3410DV-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
35R0033
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Newark | N Channel Mosfet, 30V, 8A, Tsop, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:8A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V, Product Range:-Rohs Compliant: Yes |Vishay SI3410DV-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.2780 / $0.3700 | Buy Now |
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DISTI #
97Y9498
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Newark | Mosfet, N-Ch, 30V, 8A, Tsop-6, Transistor Polarity:N Channel, Continuous Drain Current Id:8A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.016Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Dissipation Rohs Compliant: Yes |Vishay SI3410DV-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.4960 / $0.8220 | Buy Now |
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DISTI #
SI3410DV-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 30V 7.5A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3410DV-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 12000 |
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$0.2488 | Buy Now |
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DISTI #
SI3410DV-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 30V 7.5A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3410DV-T1-GE3) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.2835 / $0.3507 | Buy Now |
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DISTI #
SI3410DV-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 30V 7.5A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3410DV-T1-GE3) RoHS: Compliant Lead time: 6 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
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DISTI #
781-SI3410DV-GE3
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Mouser Electronics | MOSFET 30V Vds 20V Vgs TSOP-6 RoHS: Compliant | 14986 |
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$0.2620 / $0.8000 | Buy Now |
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Future Electronics | Si3410DV Series 30 V 19.5 mOhm Surface Mount N-Channel MOSFET - TSOP-6 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.2650 / $0.2850 | Buy Now |
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Future Electronics | Si3410DV Series 30 V 19.5 mOhm Surface Mount N-Channel MOSFET - TSOP-6 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.2650 / $0.2850 | Buy Now |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 8A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MO-193AA | 400 |
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$0.2850 / $0.9500 | Buy Now |
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DISTI #
SI3410DV-T1-GE3
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TTI | MOSFET 30V Vds 20V Vgs TSOP-6 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 9000 In Stock |
|
$0.2430 / $0.2550 | Buy Now |
Part Details for SI3410DV-T1-GE3
SI3410DV-T1-GE3 CAD Models
SI3410DV-T1-GE3 Part Data Attributes
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SI3410DV-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI3410DV-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, MO-193C, TSOP-6
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | MO-193C, TSOP-6 | |
| Reach Compliance Code | compliant | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 0.0195 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MO-193AA | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 4.1 W | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |