Parametric results for: SI3410DV-T1-GE3 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

30 V 1

1 hit Apply

Drain Current-Max (ID) (1)

8 A 1

1 hit Apply

Drain-source On Resistance-Max (1)

19.5 mΩ 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

MO-193AA 1

1 hit Apply

R-PDSO-G6 1

1 hit Apply

e3 1

1 hit Apply

Manufacturer (1)

Vishay Siliconix 1

1 hit Apply

1 1

1 hit Apply

Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

6 1

1 hit Apply

ENHANCEMENT MODE 1

1 hit Apply

150.0 °C 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

SMALL OUTLINE 1

1 hit Apply

Active 1

1 hit Apply

Yes 1

1 hit Apply

260 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

4.1 W 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply