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Transistors / Small Signal Field-Effect Transistors / SI4174DY-T1-GE3
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SI4174DY-T1-GE3 by:

Small Signal Field-Effect Transistor, 17A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8

Part Details for SI4174DY-T1-GE3 by Vishay Intertechnologies

Overview of SI4174DY-T1-GE3 by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for SI4174DY-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 90R9128
Newark Mosfet,n Channel,30V,17A,so8, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:17A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1V, No. Of Pins:8Pinsrohs Compliant: Yes |Vishay SI4174DY-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 4861
  • 1 $0.9720
  • 10 $0.8530
  • 25 $0.7730
  • 50 $0.6920
  • 100 $0.6120
  • 500 $0.5220
$0.5220 / $0.9720 Buy Now
DISTI # SI4174DY-T1-GE3
Avnet Americas Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4174DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 6 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.3945
  • 5,000 $0.3818
  • 10,000 $0.3691
  • 15,000 $0.3542
  • 20,000 $0.3427
  • 25,000 $0.3266
  • 250,000 $0.3105
$0.3105 / $0.3945 Buy Now
DISTI # 781-SI4174DY-T1-GE3
Mouser Electronics MOSFET 30V Vds 20V Vgs SO-8 RoHS: Compliant 25834
  • 1 $0.8700
  • 10 $0.7370
  • 100 $0.5230
  • 500 $0.4370
  • 1,000 $0.3720
  • 2,500 $0.3210
  • 5,000 $0.3060
  • 10,000 $0.2900
$0.2900 / $0.8700 Buy Now
Future Electronics N-CH MOSFET SO-8 BWL 30V 10MOHM @10V- LEAD(PB) AND HALOGEN FREE RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.3100
  • 5,000 $0.3050
  • 7,500 $0.3000
  • 10,000 $0.3000
  • 12,500 $0.2900
$0.2900 / $0.3100 Buy Now
Future Electronics N-CH MOSFET SO-8 BWL 30V 10MOHM @10V- LEAD(PB) AND HALOGEN FREE RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.3100
  • 5,000 $0.3050
  • 7,500 $0.3000
  • 10,000 $0.3000
  • 12,500 $0.2900
$0.2900 / $0.3100 Buy Now
Bristol Electronics   10000
RFQ
Quest Components   8000
  • 1 $1.1500
  • 1,740 $0.4025
  • 3,728 $0.3450
$0.3450 / $1.1500 Buy Now
DISTI # SI4174DY-T1-GE3
TTI MOSFET 30V Vds 20V Vgs SO-8 pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel Americas - 7500
In Stock
  • 2,500 $0.3000
  • 5,000 $0.2940
  • 12,500 $0.2880
$0.2880 / $0.3000 Buy Now
DISTI # SI4174DY-T1-GE3
Avnet Americas Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4174DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 6 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.3945
  • 5,000 $0.3818
  • 10,000 $0.3691
  • 15,000 $0.3542
  • 20,000 $0.3427
  • 25,000 $0.3266
  • 250,000 $0.3105
$0.3105 / $0.3945 Buy Now
DISTI # SI4174DY-T1-GE3
TME Transistor: N-MOSFET, unipolar, 30V, 13.5A, 3.2W, SO8 Min Qty: 1 2102
  • 1 $0.9630
  • 5 $0.5550
  • 25 $0.4830
  • 100 $0.4340
  • 500 $0.4000
$0.4000 / $0.9630 Buy Now
DISTI # SI4174DY-T1-GE3
Avnet Americas Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4174DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 6 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.3945
  • 5,000 $0.3818
  • 10,000 $0.3691
  • 15,000 $0.3542
  • 20,000 $0.3427
  • 25,000 $0.3266
  • 250,000 $0.3105
$0.3105 / $0.3945 Buy Now
DISTI # SI4174DY-T1-GE3
Avnet Asia Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R (Alt: SI4174DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days 0
RFQ
Chip1Cloud MOSFET N-CH 30V 17A 8-SOIC 5430
RFQ
CHIPMALL.COM LIMITED   195
  • 1 $0.4873
$0.4873 Buy Now
DISTI # SI4174DY-T1-GE3
EBV Elektronik Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R (Alt: SI4174DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 7 Weeks, 0 Days EBV - 0
Buy Now
DISTI # 1840422
element14 Asia-Pacific MOSFET,N CH,30V,17A,SO8 RoHS: Compliant Min Qty: 1 Container: Each 4861
  • 1 $0.9154
  • 10 $0.7973
  • 100 $0.5507
  • 500 $0.4599
  • 1,000 $0.4038
  • 5,000 $0.3499
$0.3499 / $0.9154 Buy Now
DISTI # 1840422
Farnell MOSFET,N CH,30V,17A,SO8 RoHS: Compliant Min Qty: 1 Lead time: 9 Weeks, 1 Days Container: Each 4861
  • 1 $0.9980
  • 10 $0.8376
  • 100 $0.5241
  • 500 $0.4376
  • 1,000 $0.3987
  • 5,000 $0.3586
$0.3586 / $0.9980 Buy Now
LCSC 30V 17A 9.5m10V10A 2.2V250uA 1PCSNChannel SOIC-8 MOSFETs ROHS 2210
  • 5 $0.3039
  • 50 $0.2413
  • 150 $0.2144
  • 500 $0.1809
  • 2,500 $0.1660
  • 5,000 $0.1571
$0.1571 / $0.3039 Buy Now
New Advantage Corporation N-CH MOSFET SO-8 BWL 30V 10MOHM @10V- RoHS: Compliant Min Qty: 1 Package Multiple: 2500 2500
  • 2,500 $0.4050
$0.4050 Buy Now

Part Details for SI4174DY-T1-GE3

SI4174DY-T1-GE3 CAD Models

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SI4174DY-T1-GE3 Part Data Attributes:

Parametric Data
SI4174DY-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI4174DY-T1-GE3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 17A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 17 A
Drain-source On Resistance-Max 0.0095 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 5 W
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI4174DY-T1-GE3

This table gives cross-reference parts and alternative options found for SI4174DY-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4174DY-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDS6694_NF073 Small Signal Field-Effect Transistor, 12A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 Fairchild Semiconductor Corporation SI4174DY-T1-GE3 vs FDS6694_NF073
TPC8038-H TRANSISTOR 12000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, THIN, 2-6J1B, 8 PIN, FET General Purpose Small Signal Toshiba America Electronic Components SI4174DY-T1-GE3 vs TPC8038-H
FDS6694_NL Small Signal Field-Effect Transistor, 12A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 Fairchild Semiconductor Corporation SI4174DY-T1-GE3 vs FDS6694_NL
TPC8037-H TRANSISTOR 12000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, THIN, 2-6J1B, 8 PIN, FET General Purpose Small Signal Toshiba America Electronic Components SI4174DY-T1-GE3 vs TPC8037-H
SI4174DY-T1-GE3 Small Signal Field-Effect Transistor, 12A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 Vishay Siliconix SI4174DY-T1-GE3 vs SI4174DY-T1-GE3
FDS6694 Small Signal Field-Effect Transistor, 12A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 Fairchild Semiconductor Corporation SI4174DY-T1-GE3 vs FDS6694
SI4886DY-T1-GE3 Small Signal Field-Effect Transistor, 9.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Vishay Intertechnologies SI4174DY-T1-GE3 vs SI4886DY-T1-GE3
FDS6694L86Z Small Signal Field-Effect Transistor, 12A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation SI4174DY-T1-GE3 vs FDS6694L86Z
FDS6694F011 Small Signal Field-Effect Transistor, 12A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation SI4174DY-T1-GE3 vs FDS6694F011

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