Part Details for SIHFR320TRL-GE3 by Vishay Intertechnologies
Overview of SIHFR320TRL-GE3 by Vishay Intertechnologies
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SIHFR320TRL-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
87AJ3368
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Newark | Mosfet N-Channel 400V |Vishay SIHFR320TRL-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.3360 | Buy Now |
DISTI #
SIHFR320TRL-GE3
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Avnet Americas | Transistor MOSFET N-CH 400V 3.1A 3-Pin DPAK - Tape and Reel (Alt: SIHFR320TRL-GE3) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
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$0.3307 / $0.4202 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 | 0 |
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$0.3270 | Buy Now |
DISTI #
SIHFR320TRL-GE3
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TTI | MOSFET N-CHANNEL 400V RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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Buy Now | |
DISTI #
SIHFR320TRL-GE3
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Avnet Americas | Transistor MOSFET N-CH 400V 3.1A 3-Pin DPAK - Tape and Reel (Alt: SIHFR320TRL-GE3) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
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$0.3307 / $0.4202 | Buy Now |
Part Details for SIHFR320TRL-GE3
SIHFR320TRL-GE3 CAD Models
SIHFR320TRL-GE3 Part Data Attributes:
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SIHFR320TRL-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHFR320TRL-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 8 Weeks | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 160 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 400 V | |
Drain Current-Max (ID) | 3.1 A | |
Drain-source On Resistance-Max | 1.8 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 42 W | |
Pulsed Drain Current-Max (IDM) | 12 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SIHFR320TRL-GE3
This table gives cross-reference parts and alternative options found for SIHFR320TRL-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHFR320TRL-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFR320PBF | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | Vishay Siliconix | SIHFR320TRL-GE3 vs IRFR320PBF |
IRFR320TR | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Vishay Intertechnologies | SIHFR320TRL-GE3 vs IRFR320TR |
IRFR320TRPBF | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 | Vishay Intertechnologies | SIHFR320TRL-GE3 vs IRFR320TRPBF |
SIHFR320TR-GE3 | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, | Vishay Intertechnologies | SIHFR320TRL-GE3 vs SIHFR320TR-GE3 |
IRFR320TRL | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | International Rectifier | SIHFR320TRL-GE3 vs IRFR320TRL |
IRFR320PBF | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 | Vishay Intertechnologies | SIHFR320TRL-GE3 vs IRFR320PBF |
IRFR320TRLPBF | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | Vishay Siliconix | SIHFR320TRL-GE3 vs IRFR320TRLPBF |
IRFR320TRRPBF | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | SIHFR320TRL-GE3 vs IRFR320TRRPBF |
IRFR320TR | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Vishay Siliconix | SIHFR320TRL-GE3 vs IRFR320TR |
IRFR320TRR | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | International Rectifier | SIHFR320TRL-GE3 vs IRFR320TRR |