Part Details for SIHG14N50D-GE3 by Vishay Intertechnologies
Overview of SIHG14N50D-GE3 by Vishay Intertechnologies
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SIHG14N50D-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
62W0513
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Newark | Mosfet Transistor, N Channel, 14 A, 500 V, 0.32 Ohm, 10 V, 3 V Rohs Compliant: Yes |Vishay SIHG14N50D-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 637 |
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$2.1600 / $3.5400 | Buy Now |
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DISTI #
SIHG14N50D-GE3
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Avnet Americas | Trans MOSFET N-CH 500V 14A 3-Pin TO-247AC - Tape and Reel (Alt: SIHG14N50D-GE3) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$1.5930 / $2.0237 | Buy Now |
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DISTI #
78-SIHG14N50D-GE3
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Mouser Electronics | MOSFET 500V Vds 30V Vgs TO-247AC RoHS: Compliant | 372 |
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$1.4700 / $3.1600 | Buy Now |
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Future Electronics | N Channel 500 V 400 mΩ 208 W Flange Mount Power Mosfet - TO-247AC-3 RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Container: Tube | 0Tube |
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$1.4800 / $1.5500 | Buy Now |
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Future Electronics | N Channel 500 V 400 mΩ 208 W Flange Mount Power Mosfet - TO-247AC-3 RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Container: Tube | 0Tube |
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$1.5000 / $1.5800 | Buy Now |
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Bristol Electronics | 844 |
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RFQ | ||
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Quest Components | POWER, FET | 675 |
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$1.8191 / $3.3075 | Buy Now |
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DISTI #
SIHG14N50D-GE3
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TTI | MOSFET 500V Vds 30V Vgs TO-247AC RoHS: Compliant pbFree: Pb-Free Min Qty: 500 Package Multiple: 50 Container: Tube | Americas - 0 |
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$1.4800 / $1.6700 | Buy Now |
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DISTI #
SIHG14N50D-GE3
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Avnet Americas | Trans MOSFET N-CH 500V 14A 3-Pin TO-247AC - Tape and Reel (Alt: SIHG14N50D-GE3) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$1.5930 / $2.0237 | Buy Now |
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DISTI #
SIHG14N50D-GE3
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TME | Transistor: N-MOSFET, unipolar, 500V, 9A, Idm: 38A, 208W, TO247AC Min Qty: 1 | 0 |
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$1.8500 / $2.7800 | RFQ |
Part Details for SIHG14N50D-GE3
SIHG14N50D-GE3 CAD Models
SIHG14N50D-GE3 Part Data Attributes:
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SIHG14N50D-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHG14N50D-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 56 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 14 A | |
| Drain-source On Resistance-Max | 0.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 38 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHG14N50D-GE3
This table gives cross-reference parts and alternative options found for SIHG14N50D-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHG14N50D-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF450SMD-JQR-B | Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN | TT Electronics Resistors | SIHG14N50D-GE3 vs IRF450SMD-JQR-B |
| BFD82 | Power Field-Effect Transistor, 14.5A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN | TT Electronics Resistors | SIHG14N50D-GE3 vs BFD82 |
| IXFJ13N50 | Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, I3PAK-3 | IXYS Corporation | SIHG14N50D-GE3 vs IXFJ13N50 |
| IRF450SMD-JQR-B | 13A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN | TT Electronics Power and Hybrid / Semelab Limited | SIHG14N50D-GE3 vs IRF450SMD-JQR-B |
| SIHG14N50D-GE3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | SIHG14N50D-GE3 vs SIHG14N50D-GE3 |