Part Details for SIHG23N60E-GE3 by Vishay Intertechnologies
Overview of SIHG23N60E-GE3 by Vishay Intertechnologies
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SIHG23N60E-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIHG23N60E-GE3
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Avnet Americas | Trans MOSFET N-CH 600V 23A 3-Pin TO-247AC - Bulk (Alt: SIHG23N60E-GE3) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 22 Weeks, 0 Days Container: Bulk | 0 |
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$2.2653 / $2.8778 | Buy Now |
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DISTI #
78-SIHG23N60E-GE3
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Mouser Electronics | MOSFET 600V Vds 30V Vgs TO-247AC RoHS: Compliant | 354 |
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$2.1800 / $4.4900 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 | 0 |
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$2.2400 | Buy Now |
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DISTI #
SIHG23N60E-GE3
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TTI | MOSFET 600V Vds 30V Vgs TO-247AC RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube |
Americas - 2500 In Stock |
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$2.6100 / $2.8400 | Buy Now |
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DISTI #
SIHG23N60E-GE3
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Avnet Americas | Trans MOSFET N-CH 600V 23A 3-Pin TO-247AC - Bulk (Alt: SIHG23N60E-GE3) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 22 Weeks, 0 Days Container: Bulk | 0 |
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$2.2653 / $2.8778 | Buy Now |
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DISTI #
SIHG23N60E-GE3
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EBV Elektronik | Trans MOSFET N-CH 600V 23A 3-Pin TO-247AC (Alt: SIHG23N60E-GE3) RoHS: Compliant Min Qty: 25 Package Multiple: 25 Lead time: 23 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SIHG23N60E-GE3
SIHG23N60E-GE3 CAD Models
SIHG23N60E-GE3 Part Data Attributes:
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SIHG23N60E-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHG23N60E-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 23A I(D), 600V, 0.158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 22 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 353 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 23 A | |
| Drain-source On Resistance-Max | 0.158 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 63 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHG23N60E-GE3
This table gives cross-reference parts and alternative options found for SIHG23N60E-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHG23N60E-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SIHG22N65E-GE3 | Power Field-Effect Transistor, 22A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3 | Vishay Intertechnologies | SIHG23N60E-GE3 vs SIHG22N65E-GE3 |
| R6024ENJTL | Power Field-Effect Transistor, 24A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LPTS, SC-83, 3/2 PIN | ROHM Semiconductor | SIHG23N60E-GE3 vs R6024ENJTL |
| IPB60R160C6ATMA1 | Power Field-Effect Transistor, 23.8A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | SIHG23N60E-GE3 vs IPB60R160C6ATMA1 |