Part Details for SPB80P06PG by Infineon Technologies AG
Overview of SPB80P06PG by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for SPB80P06PG
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 2 | 67 |
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$1.7920 / $3.5840 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 80A I(D), 60V, 0.023OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 6 |
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$2.6400 / $3.9600 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 80A I(D), 60V, 0.023OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 53 |
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$2.4000 / $4.8000 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 80A I(D), 60V, 0.023OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 700 |
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$3.6195 / $7.2390 | Buy Now |
Part Details for SPB80P06PG
SPB80P06PG CAD Models
SPB80P06PG Part Data Attributes:
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SPB80P06PG
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPB80P06PG
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 60V, 0.023ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | GREEN, PLASTIC, TO-263, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 823 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.023 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 340 W | |
| Pulsed Drain Current-Max (IDM) | 320 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for SPB80P06PG
This table gives cross-reference parts and alternative options found for SPB80P06PG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPB80P06PG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SPB80P06PGATMA1 | Power Field-Effect Transistor, 80A I(D), 60V, 0.023ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | SPB80P06PG vs SPB80P06PGATMA1 |
| SPB80P06P | 80A, 60V, 0.023ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, PLASTIC, TO-263, 3 PIN | Rochester Electronics LLC | SPB80P06PG vs SPB80P06P |