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Transistors / Power Field-Effect Transistors / SUP60030E-GE3
Datasheets
SUP60030E-GE3 by:

Power Field-Effect Transistor, 120A I(D), 80V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

Part Details for SUP60030E-GE3 by Vishay Intertechnologies

Overview of SUP60030E-GE3 by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for SUP60030E-GE3

Part # Distributor Description Stock Price Buy
DISTI # 80AK5474
Newark Mosfet, N-Ch, 80V, 120A, To-220Ab Rohs Compliant: Yes |Vishay SUP60030E-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 500
  • 1 $3.1800
  • 10 $2.8600
  • 25 $2.6900
  • 50 $2.5200
  • 100 $2.3500
$2.3500 / $3.1800 Buy Now
DISTI # SUP60030E-GE3
Avnet Americas Trans MOSFET N-CH 80V 120A 3-Pin TO-220AB - Tape and Reel (Alt: SUP60030E-GE3) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 38 Weeks, 0 Days Container: Reel 0
  • 500 $1.9949
$1.9949 Buy Now
DISTI # 78-SUP60030E-GE3
Mouser Electronics MOSFET 80V Vds 20V Vgs TO-220 RoHS: Compliant 181
  • 1 $2.9400
  • 10 $2.5500
  • 25 $2.3400
  • 100 $2.0000
  • 250 $1.9400
  • 500 $1.8300
  • 1,000 $1.5800
$1.5800 / $2.9400 Buy Now
Future Electronics N-Channel 80 V 3.4 mOhm 375 W TrenchFET Power Mosfet - TO-220AB RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Container: Box 0
Box
  • 500 $1.5700
  • 1,000 $1.5500
  • 1,500 $1.5400
  • 2,000 $1.5300
  • 2,500 $1.5000
$1.5000 / $1.5700 Buy Now
Future Electronics N-Channel 80 V 3.4 mOhm 375 W TrenchFET Power Mosfet - TO-220AB RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Container: Box 0
Box
  • 500 $1.5700
  • 1,000 $1.5500
  • 1,500 $1.5400
  • 2,000 $1.5300
  • 2,500 $1.5000
$1.5000 / $1.5700 Buy Now
DISTI # SUP60030E-GE3
TTI MOSFET 80V Vds 20V Vgs TO-220 pbFree: Pb-Free Min Qty: 500 Package Multiple: 500 Container: Reel Americas - 0
  • 500 $1.6100
  • 1,000 $1.5600
  • 2,000 $1.5300
  • 3,000 $1.5000
  • 5,000 $1.4700
  • 10,000 $1.4400
$1.4400 / $1.6100 Buy Now
DISTI # SUP60030E-GE3
Avnet Americas Trans MOSFET N-CH 80V 120A 3-Pin TO-220AB - Tape and Reel (Alt: SUP60030E-GE3) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 38 Weeks, 0 Days Container: Reel 0
  • 500 $1.9949
$1.9949 Buy Now
DISTI # SUP60030E-GE3
TME Transistor: N-MOSFET, TrenchFET®, unipolar, 80V, 120A, Idm: 250A Min Qty: 1 0
  • 1 $3.2500
  • 10 $2.9300
  • 50 $2.5900
  • 250 $2.3300
  • 1,000 $2.1100
$2.1100 / $3.2500 RFQ
DISTI # SUP60030E-GE3
EBV Elektronik Trans MOSFET N-CH 80V 120A 3-Pin TO-220AB (Alt: SUP60030E-GE3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 39 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SUP60030E-GE3

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SUP60030E-GE3 Part Data Attributes:

Parametric Data
SUP60030E-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SUP60030E-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 120A I(D), 80V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 38 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 245 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.0034 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 250 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SUP60030E-GE3

This table gives cross-reference parts and alternative options found for SUP60030E-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SUP60030E-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
AP97T07AGP-HF TRANSISTOR 120 A, 75 V, 0.0034 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power Advanced Power Electronics Corp SUP60030E-GE3 vs AP97T07AGP-HF
SUM60030E-GE3 Power Field-Effect Transistor, 120A I(D), 80V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-263, D2PAK-3/2 Vishay Intertechnologies SUP60030E-GE3 vs SUM60030E-GE3

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