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Transistors / Power Field-Effect Transistors / TK60S10N1L,LXHQ
Datasheets
TK60S10N1L,LXHQ by: Toshiba America Electronic Components

Power Field-Effect Transistor, 60A I(D), 100V, 0.00925ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for TK60S10N1L,LXHQ by Toshiba America Electronic Components

Overview of TK60S10N1L,LXHQ by Toshiba America Electronic Components

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for TK60S10N1L,LXHQ

Part # Distributor Description Stock Price Buy
DISTI # 264-TK60S10N1LLXHQCT-ND
DigiKey MOSFET N-CH 100V 60A DPAK Min Qty: 1 Lead time: 32 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 9993
In Stock
  • 1 $1.5200
  • 10 $1.2620
  • 100 $1.0044
  • 500 $0.8499
  • 1,000 $0.7211
  • 2,000 $0.6851
  • 6,000 $0.6593
  • 10,000 $0.6375
$0.6375 / $1.5200 Buy Now
DISTI # TK60S10N1L,LXHQ
Avnet Americas Transistor MOSFET N-Channel 100V 60A 3-Pin DPAK - Tape and Reel (Alt: TK60S10N1L,LXHQ) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Container: Reel 0
RFQ
DISTI # 757-TK60S10N1LLXHQ
Mouser Electronics MOSFET PD=180W F=1MHZ AEC-Q101 RoHS: Compliant 7988
  • 1 $1.5100
  • 10 $1.2600
  • 100 $1.0000
  • 250 $0.9270
  • 500 $0.8410
  • 1,000 $0.7210
  • 2,000 $0.6850
  • 4,000 $0.6590
  • 10,000 $0.6370
$0.6370 / $1.5100 Buy Now
DISTI # TK60S10N1L,LXHQ
Avnet Americas Transistor MOSFET N-Channel 100V 60A 3-Pin DPAK - Tape and Reel (Alt: TK60S10N1L,LXHQ) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Container: Reel 0
RFQ
DISTI # TK60S10N1L,LXHQ
Avnet Americas Transistor MOSFET N-Channel 100V 60A 3-Pin DPAK - Tape and Reel (Alt: TK60S10N1L,LXHQ) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Container: Reel 0
RFQ

Part Details for TK60S10N1L,LXHQ

TK60S10N1L,LXHQ CAD Models

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TK60S10N1L,LXHQ Part Data Attributes

Parametric Data
TK60S10N1L,LXHQ Toshiba America Electronic Components
Buy Now Datasheet
Compare Parts:
TK60S10N1L,LXHQ Toshiba America Electronic Components Power Field-Effect Transistor, 60A I(D), 100V, 0.00925ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Package Description DPAK-3/2
Reach Compliance Code unknown
Samacsys Manufacturer Toshiba
Avalanche Energy Rating (Eas) 187 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 60 A
Drain-source On Resistance-Max 0.00925 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 220 pF
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 180 W
Pulsed Drain Current-Max (IDM) 180 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for TK60S10N1L,LXHQ

This table gives cross-reference parts and alternative options found for TK60S10N1L,LXHQ. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TK60S10N1L,LXHQ, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
TK60F10N1L Power Field-Effect Transistor Toshiba America Electronic Components TK60S10N1L,LXHQ vs TK60F10N1L
TK60F10N1L,LXGQ Power Field-Effect Transistor, 60A I(D), 100V, 0.00925ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Toshiba America Electronic Components TK60S10N1L,LXHQ vs TK60F10N1L,LXGQ
TK60S10N1L Power Field-Effect Transistor Toshiba America Electronic Components TK60S10N1L,LXHQ vs TK60S10N1L

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