Part Details for ZXMN3G32DN8TA by Diodes Incorporated
Overview of ZXMN3G32DN8TA by Diodes Incorporated
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for ZXMN3G32DN8TA
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31-ZXMN3G32DN8TACT-ND
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DigiKey | MOSFET 2N-CH 30V 5.5A 8SO Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1459 In Stock |
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$0.2888 / $0.8700 | Buy Now |
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DISTI #
ZXMN3G32DN8TA
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Avnet Americas | Transistor MOSFET Array Dual N-CH 30V 7.1A 8-Pin SOIC T/R - Tape and Reel (Alt: ZXMN3G32DN8TA) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 8 Weeks, 0 Days Container: Reel | 47000 Factory Stock |
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$0.2864 / $0.3384 | Buy Now |
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DISTI #
522-ZXMN3G32DN8TA
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Mouser Electronics | MOSFET 30V Dual N-Channel Enhance. Mode MOSFET RoHS: Compliant | 1680 |
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$0.2880 / $0.8700 | Buy Now |
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Future Electronics | Dual N-Channel 30 V 0.028 Ohm Enhancement Mode MOSFET - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Lead time: 8 Weeks Container: Reel | 8500Reel |
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$0.3000 / $0.3350 | Buy Now |
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Future Electronics | Dual N-Channel 30 V 0.028 Ohm Enhancement Mode MOSFET - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Lead time: 8 Weeks Container: Reel | 0Reel |
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$0.2850 / $0.3200 | Buy Now |
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DISTI #
ZXMN3G32DN8TA
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Avnet Silica | Transistor MOSFET Array Dual N-CH 30V 7.1A 8-Pin SOIC T/R (Alt: ZXMN3G32DN8TA) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 10 Weeks, 0 Days | Silica - 15000 |
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Buy Now | |
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Chip1Cloud | MOSFET 2N-CH 30V 5.5A 8SOIC | 6329 |
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RFQ | |
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New Advantage Corporation | Dual N-Channel 30 V 0.028 Ohm Enhancement Mode MOSFET - SOIC-8 RoHS: Compliant Min Qty: 1 Package Multiple: 500 | 7000 |
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$0.3867 / $0.4143 | Buy Now |
Part Details for ZXMN3G32DN8TA
ZXMN3G32DN8TA CAD Models
ZXMN3G32DN8TA Part Data Attributes
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ZXMN3G32DN8TA
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
ZXMN3G32DN8TA
Diodes Incorporated
Small Signal Field-Effect Transistor, 5.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Part Package Code | SOT | |
| Package Description | SOP-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 8 Weeks | |
| Samacsys Manufacturer | Diodes Incorporated | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 5.5 A | |
| Drain-source On Resistance-Max | 0.028 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.1 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for ZXMN3G32DN8TA
This table gives cross-reference parts and alternative options found for ZXMN3G32DN8TA. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ZXMN3G32DN8TA, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| DMN3024LSD-13 | Small Signal Field-Effect Transistor, 5.7A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 | Diodes Incorporated | ZXMN3G32DN8TA vs DMN3024LSD-13 |
| SI4834DY-T1 | Small Signal Field-Effect Transistor, 5.7A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Vishay Siliconix | ZXMN3G32DN8TA vs SI4834DY-T1 |
| SI4944DY-T1-E3 | Small Signal Field-Effect Transistor, 9.3A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 | Vishay Intertechnologies | ZXMN3G32DN8TA vs SI4944DY-T1-E3 |
| SI4926DY-T1 | Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Vishay Siliconix | ZXMN3G32DN8TA vs SI4926DY-T1 |
| SI4922BDY-T1-GE3 | Small Signal Field-Effect Transistor, 8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOIC-8 | Vishay Intertechnologies | ZXMN3G32DN8TA vs SI4922BDY-T1-GE3 |
| SI4924DY | Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Vishay Intertechnologies | ZXMN3G32DN8TA vs SI4924DY |
| SI4804DY-T1 | Small Signal Field-Effect Transistor, 5.7A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Vishay Siliconix | ZXMN3G32DN8TA vs SI4804DY-T1 |
| SI9926CDY-T1-E3 | TRANSISTOR 8000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal | Vishay Siliconix | ZXMN3G32DN8TA vs SI9926CDY-T1-E3 |
| SI4214DDY-T1-E3 | Small Signal Field-Effect Transistor, 8.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Vishay Intertechnologies | ZXMN3G32DN8TA vs SI4214DDY-T1-E3 |
| SI4922BDY-T1-E3 | Small Signal Field-Effect Transistor, 8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOIC-8 | Vishay Intertechnologies | ZXMN3G32DN8TA vs SI4922BDY-T1-E3 |