Parametric results for: 05eee亚洲图片＋71774б292_Q扣_号zox under Rectifier Diodes

All Filters Additional Feature Application Breakdown Voltage-Min Case Connection Configuration Diode Capacitance-Max Diode Element Material Diode Type Forward Voltage-Max (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Output Current-Max Power Dissipation-Max Rep Pk Reverse Voltage-Max Reverse Current-Max Reverse Recovery Time-Max Surface Mount Technology

FAST SWITCHING 1 FREE WHEELING DIODE 10 FREE WHEELING DIODE, HIGH RELIABILITY 2 FREE WHEELING DIODE, LOW LEAKAGE CURRENT 4 HIGH RELIABILITY 27 HIGH RELIABILITY, LOW POWER LOSS 1 HIGH SURGE CAPABILITY 2 LOW LEAKAGE CURRENT 2 LOW POWER LOSS 3 LOW POWER LOSS, REVERSE ENERGY TESTED 1 METALLURGICALLY BONDED 2 TR, 7 INCH: 3000 3

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EFFICIENCY 40 FAST RECOVERY 7 FAST RECOVERY POWER 4 GENERAL PURPOSE 20 HIGH VOLTAGE 2 POWER 1 SUPER FAST RECOVERY 9 ULTRA FAST RECOVERY 4

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Breakdown Voltage-Min (4)

20 V 2 30 V 2 40 V 1 70 V 3

Min (V) - Max (V)

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ANODE AND CATHODE 1 CATHODE 27 ISOLATED 51 UNSPECIFIED 6

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Configuration (3)

COMMON CATHODE, 2 ELEMENTS 47 SERIES CONNECTED, CENTER TAP, 2 ELEMENTS 1 SINGLE 209

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Diode Capacitance-Max (1)

2 pF 6

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Diode Element Material (1)

SILICON 238

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Diode Type (2)

MIXER DIODE 4 RECTIFIER DIODE 266

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Forward Voltage-Max (VF) (29)

130 mV 27 180 mV 14 240 mV 2 255 mV 1 300 mV 1 350 mV 4 380 mV 4 390 mV 7 410 mV 6 420 mV 1 430 mV 2 470 mV 8 480 mV 2 500 mV 2 590 mV 1 620 mV 1 670 mV 2 700 mV 2 720 mV 1 750 mV 2 875 mV 1 950 mV 4 975 mV 1 1 V 8 1.1 V 10 1.2 V 3 1.25 V 6 1.3 V 3 1.7 V 11

Min (V) - Max (V)

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DO-15 1 DO-201AD 11 DO-203AA 2 DO-203AB 2 DO-204AL 13 DO-214AC 2 DO-41 4 TO-220 1 TO-236AB 15 TO-3 1

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E-LALF-W2 2 O-CEDB-N2 1 O-LALF-W2 16 O-MBFM-P2 2 O-MUPM-D1 4 O-PALF-W2 30 O-XALF-W2 3 O-XUPM-X2 3 R-PBCC-N2 14 R-PDSO-C2 2 R-PDSO-F2 70 R-PDSO-G2 11 R-PDSO-G3 55 R-PDSO-G4 4 R-PDSO-N2 17 R-PSFM-T2 1 R-XUFM-X1 1 R-XUFM-X2 1 S-MSFM-P3 1

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e0 14 e3 154

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Manufacturer (23)

Diotec Semiconductor AG 1 Gentron Corp 2 Gulfsemi 4 Hitachi Ltd 1 Infineon Technologies AG 25 KSL Microdevices Inc 12 LRC Leshan Radio Co Ltd 3 Microchip Technology Inc 2 Microsemi Corporation 32 Nexperia 72 NXP Semiconductors 47 Philips Semiconductors 11 Powerex Power Semiconductors 1 Rectron Semiconductor 30 Renesas Electronics Corporation 1 Rochester Electronics LLC 2 Semicon Components Inc 1 Siemens 10 Suzhou Good-Ark Electronics Co Ltd 3 Victory Engineering Corp 2 Vishay Dale 1 Vishay Intertechnologies 16 Vishay Semiconductors 11

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Number of Elements (2)

1 208 2 49

Min - Max

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Output Current-Max (28)

70 mA 5 120 mA 13 200 mA 11 250 mA 2 500 mA 130 700 mA 2 710 mA 3 1 A 23 2 A 6 2.5 A 3 3 A 15 4 A 5 5 A 3 6 A 2 7.5 A 1 8 A 1 9 A 1 10 A 1 12 A 1 15 A 1 20 A 1 30 A 1 40 A 1 50 A 1 70 A 1 90 A 1 100 A 2 500 A 1

Min (A) - Max (A)

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Power Dissipation-Max (18)

150 mW 1 200 mW 8 230 mW 3 250 mW 28 280 mW 8 310 mW 7 340 mW 5 360 mW 11 370 mW 1 375 mW 10 390 mW 6 400 mW 10 405 mW 6 450 mW 4 660 mW 3 830 mW 12 1.2 W 4 2.5 W 3

Min (W) - Max (W)

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Rep Pk Reverse Voltage-Max (13)

20 V 39 30 V 38 40 V 48 50 V 16 70 V 12 100 V 5 150 V 4 200 V 4 300 V 6 400 V 9 500 V 10 600 V 22 1 kV 4

Min (V) - Max (V)

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Reverse Current-Max (18)

100 nA 3 200 nA 1 1 µA 2 2 µA 2 3.5 µA 1 5 µA 18 9 µA 1 10 µA 2 15 µA 1 20 µA 1 30 µA 3 50 µA 4 70 µA 1 100 µA 7 150 µA 2 200 µA 7 250 µA 1 500 µA 1

Min (µA) - Max (µA)

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Reverse Recovery Time-Max (18)

1.28 ns 3 1.42 ns 3 1.9 ns 3 2 ns 4 5 ns 18 6 ns 4 7 ns 1 25 ns 1 35 ns 24 50 ns 13 60 ns 1 75 ns 12 100 ns 2 250 ns 7 300 ns 3 2 µs 1 3 µs 4 5 µs 1

Min (µs) - Max (µs)

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Surface Mount (2)

NO 71 YES 192

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Technology (2)

AVALANCHE 12 SCHOTTKY 169

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