Parametric results for: 仿制假刚果共和国身份证【制证+微ADXC68】精仿-3nm65 under Power Field-Effect Transistors

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Manufacturer Part Number: 3nm65
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3NM65G-TF3-T
Unisonic Technologies Co Ltd
Check for Price Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 650 V 1 3 A 2.15 Ω 104 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 9 A SWITCHING SILICON TO-220AB R-PSFM-T3 150 °C NOT SPECIFIED NOT SPECIFIED ISOLATED PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT THROUGH-HOLE SINGLE UNISONIC TECHNOLOGIES CO LTD TO-220F, 3 PIN compliant EAR99
3NM65G-TN3-R
Unisonic Technologies Co Ltd
Check for Price Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 650 V 1 3 A 2.15 Ω 104 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 9 A SWITCHING SILICON TO-252 R-PSSO-G2 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING SINGLE UNISONIC TECHNOLOGIES CO LTD compliant EAR99
3NM65L-TF1-T
Unisonic Technologies Co Ltd
Check for Price Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 650 V 1 3 A 2.15 Ω 104 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 9 A SWITCHING SILICON TO-220AB R-PSFM-T3 150 °C NOT SPECIFIED NOT SPECIFIED ISOLATED PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT THROUGH-HOLE SINGLE UNISONIC TECHNOLOGIES CO LTD TO-220F1, 3 PIN compliant EAR99
3NM65L-TM3-T
Unisonic Technologies Co Ltd
Check for Price Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 650 V 1 3 A 2.15 Ω 104 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 9 A SWITCHING SILICON TO-251 R-PSIP-T3 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR IN-LINE THROUGH-HOLE SINGLE UNISONIC TECHNOLOGIES CO LTD compliant EAR99
13NM65L-TQ2-T
Unisonic Technologies Co Ltd
Check for Price Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 650 V 1 13 A 500 mΩ 452 mJ 64 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 118 W 26 A SWITCHING SILICON TO-263AB R-PSSO-G2 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING SINGLE UNISONIC TECHNOLOGIES CO LTD , compliant EAR99
13NM65L-T2Q-T
Unisonic Technologies Co Ltd
Check for Price Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 650 V 1 13 A 500 mΩ 452 mJ 64 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 118 W 26 A SWITCHING SILICON TO-262AA R-PSIP-T3 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR IN-LINE THROUGH-HOLE SINGLE UNISONIC TECHNOLOGIES CO LTD , compliant EAR99
3NM65G-FD-TN3-R
Unisonic Technologies Co Ltd
Check for Price Yes Active NOT SPECIFIED NOT SPECIFIED UNISONIC TECHNOLOGIES CO LTD compliant EAR99
13NM65G-TN3-R
Unisonic Technologies Co Ltd
Check for Price Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 650 V 1 13 A 500 mΩ 452 mJ 64 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 60 W 26 A SWITCHING SILICON TO-252 R-PSSO-G2 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING SINGLE UNISONIC TECHNOLOGIES CO LTD , compliant EAR99
3NM65L-TF3-T
Unisonic Technologies Co Ltd
Check for Price Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 650 V 1 3 A 2.15 Ω 104 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 9 A SWITCHING SILICON TO-220AB R-PSFM-T3 150 °C NOT SPECIFIED NOT SPECIFIED ISOLATED PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT THROUGH-HOLE SINGLE UNISONIC TECHNOLOGIES CO LTD TO-220F, 3 PIN compliant EAR99
3NM65L-TA3-T
Unisonic Technologies Co Ltd
Check for Price Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 650 V 1 3 A 2.15 Ω 104 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 9 A SWITCHING SILICON TO-220AB R-PSFM-T3 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT THROUGH-HOLE SINGLE UNISONIC TECHNOLOGIES CO LTD TO-220, 3 PIN compliant EAR99