Parametric results for: 圣约瑟夫卡柳梅特学院文凭毕业证样本照片<证件+薇aptao168>-hiy97 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature Clock Frequency-Max (fCLK) I/O Type JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (3)

DUAL BANK PAGE BURST 65 FOUR BANK PAGE BURST 12 SINGLE BANK PAGE BURST 125

290 hits Apply

Access Time-Max (5)

700 ps 22 750 ps 59 800 ps 10 900 ps 6 5.4 ns 23

Min (ns) - Max (ns)

290 hits Apply

AUTO/SELF REFRESH 165 AUTO/SELF REFRESH; WD-MAX 2 SELF CONTAINED REFRESH 35

290 hits Apply

Clock Frequency-Max (fCLK) (8)

125 MHz 6 133 MHz 37 166 MHz 4 167 MHz 11 200 MHz 2 400 MHz 6 533 MHz 10 667 MHz 13

Min (MHz) - Max (MHz)

290 hits Apply

COMMON 89

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R-PDMA-N144 6 R-PDMA-N200 54 R-PDMA-N204 25 R-PDSO-G54 4 R-PZMA-N200 2 R-XDMA-N144 6 R-XDMA-N200 58 R-XDMA-N204 5 R-XZMA-N144 7 R-XZMA-N200 60 R-XZMA-N204 60

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e1 1 e3 10 e4 195

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22.238 mm 4 67.585 mm 7 67.6 mm 55 67.75 mm 4

Min (mm) - Max (mm)

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Manufacturer (2)

Micron Technology Inc 286 SK Hynix Inc 4

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Memory Density (16)

134.2177 Mbit 4 268.4355 Mbit 3 536.8709 Mbit 6 603.9798 Mbit 8 1.0737 Gbit 9 1.208 Gbit 23 2.1475 Gbit 11 2.4159 Gbit 25 4.295 Gbit 25 4.8318 Gbit 34 8.5899 Gbit 29 9.6637 Gbit 33 17.1799 Gbit 45 19.3274 Gbit 9 34.3597 Gbit 18 38.6547 Gbit 5

Min (bit) - Max (bit)

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DDR DRAM MODULE 249 SYNCHRONOUS DRAM 4 SYNCHRONOUS DRAM MODULE 22

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Memory Width (3)

8 4 64 146 72 137

Min - Max

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1 10

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1.0 202

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1 202

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144 19 200 174 204 90 54 4

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4.1943 M 3 8.3886 M 14 16.7772 M 36 33.5544 M 36 67.1089 M 59 134.2177 M 62 268.4355 M 54 536.8709 M 23

Min (words) - Max (words)

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4000000.0 3 8000000.0 14 1.6E7 36 3.2E7 36 6.4E7 59 1.28E8 62 2.56E8 54 5.12E8 23

Min - Max

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SYNCHRONOUS 202

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70.0 °C 1 85.0 °C 285 95.0 °C 1

Min (°C) - Max (°C)

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-40.0 °C 286 0.0 °C 1

Min (°C) - Max (°C)

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Organization (16)

128MX64 29 128MX72 33 16MX64 9 16MX72 23 16MX8 4 256MX64 45 256MX72 9 32MX64 11 32MX72 25 4MX64 3 512MX64 18 512MX72 5 64MX64 25 64MX72 34 8MX64 6 8MX72 8

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3-STATE 89

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PLASTIC/EPOXY 91 UNSPECIFIED 196

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DIMM 283 TSOP2 4

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DIMM144,32 6 DIMM200,24 54 DIMM204,24 29

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RECTANGULAR 287

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MICROELECTRONIC ASSEMBLY 283 SMALL OUTLINE, THIN PROFILE 4

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Refresh Cycles (2)

4096 14 8192 75

Min - Max

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Supply Voltage-Nom (Vsup) (5)

1.5 V 65 1.8 V 73 2.5 V 100 2.6 V 1 3.3 V 23

Min (V) - Max (V)

290 hits Apply