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K4D261638K-LC40
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 134.2177 Mbit | 16 | 8MX16 | 2.5 V | 600 ps | 250 MHz | 4096 | FOUR BANK PAGE BURST | GDDR1 DRAM | AUTO/SELF REFRESH | COMMON | 2,4,8 | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | YES | 2,4,8 | 45 mA | 350 µA | 2.625 V | 2.375 V | CMOS | COMMERCIAL | R-PDSO-G66 | Not Qualified | 3 | 65 °C | 260 | 66 | PLASTIC/EPOXY | TSOP2 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 650 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | SAMSUNG SEMICONDUCTOR INC | 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 | unknown | EAR99 | 8542.32.00.02 | ||||||||
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K4D55323QF-VC36
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 268.4355 Mbit | 32 | 8MX32 | 1.8 V | 600 ps | 275 MHz | 4096 | GDDR1 DRAM | COMMON | 8000000 | 8.3886 M | 3-STATE | 4 | CMOS | COMMERCIAL | S-PBGA-B144 | Not Qualified | 3 | 65 °C | 260 | 144 | PLASTIC/EPOXY | FBGA | BGA144,12X12,32 | SQUARE | GRID ARRAY, FINE PITCH | YES | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | FBGA, BGA144,12X12,32 | compliant | EAR99 | 8542.32.00.24 | ||||||||||||||||||||||
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K4D263238E-GC22
Samsung Semiconductor
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Check for Price | No | Obsolete | 134.2177 Mbit | 32 | 4MX32 | 2.8 V | 550 ps | 450 MHz | 4096 | FOUR BANK PAGE BURST | GDDR1 DRAM | AUTO/SELF REFRESH | COMMON | 2,4,8 | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | 3-STATE | YES | 2,4,8,FP | 120 mA | 1.29 mA | 2.94 V | 2.66 V | CMOS | COMMERCIAL | S-PBGA-B144 | Not Qualified | e0 | 65 °C | 144 | PLASTIC/EPOXY | LFBGA | BGA144,12X12,32 | SQUARE | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 800 µm | BOTTOM | 1.4 mm | 12 mm | 12 mm | SAMSUNG SEMICONDUCTOR INC | FBGA-144 | compliant | EAR99 | 8542.32.00.02 | ||||||||
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K4D261638K-LC50T
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 134.2177 Mbit | 16 | 8MX16 | 2.5 V | 700 ps | 200 MHz | 4096 | FOUR BANK PAGE BURST | GDDR1 DRAM | AUTO/SELF REFRESH | COMMON | 2,4,8 | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | YES | 2,4,8 | 40 mA | 300 µA | 2.7 V | 2.375 V | CMOS | COMMERCIAL | R-PDSO-G66 | Not Qualified | 65 °C | NOT SPECIFIED | NOT SPECIFIED | 66 | PLASTIC/EPOXY | TSOP2 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 650 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | SAMSUNG SEMICONDUCTOR INC | TSOP2, TSSOP66,.46 | unknown | EAR99 | 8542.32.00.02 | TSOP2 | 66 | ||||||
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K4D26323QG-VC2A0
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 134.2177 Mbit | 32 | 4MX32 | 1.8 V | 550 ps | 350 MHz | 4096 | FOUR BANK PAGE BURST | GDDR1 DRAM | AUTO/SELF REFRESH | COMMON | 2,4,8 | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | 3-STATE | YES | 2,4,8 | 10 mA | 440 µA | 1.9 V | 1.7 V | CMOS | COMMERCIAL | S-PBGA-B144 | Not Qualified | e1 | 3 | 65 °C | 144 | PLASTIC/EPOXY | LFBGA | BGA144,12X12,32 | SQUARE | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.4 mm | 12 mm | 12 mm | SAMSUNG SEMICONDUCTOR INC | LFBGA, BGA144,12X12,32 | compliant | EAR99 | 8542.32.00.02 | BGA | 144 | |||||
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K4D26323QG-GC25
Samsung Semiconductor
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Check for Price | No | Obsolete | 134.2177 Mbit | 32 | 4MX32 | 1.8 V | 450 ps | 400 MHz | 4096 | GDDR1 DRAM | COMMON | 2,4,8 | 4000000 | 4.1943 M | 3-STATE | 2,4,8 | 53 mA | 490 µA | CMOS | COMMERCIAL | S-PBGA-B144 | Not Qualified | e0 | 65 °C | 144 | PLASTIC/EPOXY | FBGA | BGA144,12X12,32 | SQUARE | GRID ARRAY, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | FBGA, BGA144,12X12,32 | unknown | EAR99 | 8542.32.00.02 | |||||||||||||||||||
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K4D551638F-LC360
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 268.4355 Mbit | 16 | 16MX16 | 2.8 V | 600 ps | 166 MHz | 8192 | FOUR BANK PAGE BURST | GDDR1 DRAM | AUTO/SELF REFRESH | COMMON | 2,4,8 | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | 3-STATE | YES | 2,4,8 | 350 µA | 2.9 V | 2.7 V | CMOS | COMMERCIAL | R-PDSO-G66 | Not Qualified | e6 | 3 | 65 °C | 66 | PLASTIC/EPOXY | TSSOP | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | TIN BISMUTH | GULL WING | 650 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | SAMSUNG SEMICONDUCTOR INC | TSSOP, TSSOP66,.46 | compliant | EAR99 | 8542.32.00.24 | TSOP2 | 66 | ||||||
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K4D261638I-LC40T
Samsung Semiconductor
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Check for Price | Yes | Yes | Obsolete | 134.2177 Mbit | 16 | 8MX16 | 2.5 V | 600 ps | 250 MHz | 4096 | FOUR BANK PAGE BURST | GDDR1 DRAM | AUTO/SELF REFRESH | COMMON | 2,4,8 | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | YES | 2,4,8 | 345 mA | 390 µA | 2.625 V | 2.375 V | CMOS | COMMERCIAL | R-PDSO-G66 | Not Qualified | e3 | 1 | 65 °C | 66 | PLASTIC/EPOXY | TSSOP | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | MATTE TIN | GULL WING | 650 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | SAMSUNG SEMICONDUCTOR INC | TSSOP, TSSOP66,.46 | compliant | EAR99 | 8542.32.00.02 | ||||||
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K4D551638D-TC33T
Samsung Semiconductor
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Check for Price | No | Active | 268.4355 Mbit | 16 | 16MX16 | 2.6 V | 600 ps | 300 MHz | 4096 | GDDR1 DRAM | COMMON | 2,4,8 | 16000000 | 16.7772 M | 3-STATE | 2,4,8 | 70 mA | 450 µA | CMOS | COMMERCIAL | R-PDSO-G66 | Not Qualified | 65 °C | 66 | PLASTIC/EPOXY | TSSOP | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | GULL WING | 635 µm | DUAL | SAMSUNG SEMICONDUCTOR INC | TSSOP, TSSOP66,.46 | compliant | EAR99 | 8542.32.00.24 | |||||||||||||||||||||
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K4D261638F-LC33
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 134.2177 Mbit | 16 | 8MX16 | 2.5 V | 600 ps | 300 MHz | 4096 | GDDR1 DRAM | COMMON | 2,4,8 | 8000000 | 8.3886 M | 3-STATE | 2,4,8 | 45 mA | 290 µA | CMOS | COMMERCIAL | R-PDSO-G66 | Not Qualified | 3 | 65 °C | 260 | 66 | PLASTIC/EPOXY | TSSOP | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | GULL WING | 635 µm | DUAL | SAMSUNG SEMICONDUCTOR INC | TSSOP, TSSOP66,.46 | compliant | EAR99 | 8542.32.00.02 |