Parametric results for: 1N5558 under Transient Suppressors

All Filters Additional Feature Breakdown Voltage-Min Breakdown Voltage-Nom Case Connection Clamping Voltage-Max Configuration Diode Element Material Diode Type JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Polarity Power Dissipation-Max Rep Pk Reverse Voltage-Max Reverse Current-Max Surface Mount Technology

HIGH RELIABILITY 2 TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE 3

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Breakdown Voltage-Min (1)

191 V 45

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Breakdown Voltage-Nom (1)

191 V 7

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CATHODE 6 ISOLATED 27

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Clamping Voltage-Max (1)

265 V 15

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Configuration (1)

SINGLE 45

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Diode Element Material (1)

SILICON 45

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Diode Type (1)

TRANS VOLTAGE SUPPRESSOR DIODE 55

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DO-13 17 DO-202AA 14

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O-LALF-W2 2 O-MALF-W2 30 O-MEDB-N2 4 O-XALF-W2 8

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e0 21 e3 4

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Manufacturer (16)

Advanced Semiconductor Inc 1 Defense Logistics Agency 3 Digitron Semiconductors 6 Littelfuse Inc 1 Microchip Technology Inc 4 Microsemi Corporation 14 New England Semiconductor 4 New Jersey Semiconductor Products Inc 2 ProTek Devices 4 Semicon Components Inc 5 Semitronics Corp 1 Sensitron Semiconductors 3 Silicon Transistor Corporation 4 SMSC 1 Square D by Schneider Electric 1 Vishay Semiconductors 1

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Number of Elements (1)

1 45

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Polarity (2)

BIDIRECTIONAL 1 UNIDIRECTIONAL 48

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Power Dissipation-Max (1)

1 W 37

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Rep Pk Reverse Voltage-Max (1)

175 V 42

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Reverse Current-Max (1)

5 µA 8

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Surface Mount (2)

NO 44 YES 4

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Technology (2)

AVALANCHE 42 ZENER 3

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