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Manufacturer Part Number: 28c010h
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CE28C010H-150
 LSI Corporation 		Check for Price No Obsolete 1.0486 Mbit 8 128KX8 5 V 150 ns EEPROM AUTOMATIC WRITE;PAGE WRITE;BULK ERASE NO YES 10 10000 Write/Erase Cycles 1 128000 131.072 k ASYNCHRONOUS 128 words PARALLEL 5 V 850 µA 120 µA 5.25 V 4.75 V CMOS INDUSTRIAL YES 5 ms R-CDIP-T32 Not Qualified e0 85 °C -40 °C 32 CERAMIC, METAL-SEALED COFIRED DIP DIP32,.6 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 5.08 mm 40.64 mm 15.24 mm SEEQ TECHNOLOGY INC DIP, DIP32,.6 unknown EAR99 8542.32.00.51
CE28C010H-250
 LSI Corporation 		Check for Price No Obsolete 1.0486 Mbit 8 128KX8 5 V 250 ns EEPROM AUTOMATIC WRITE;PAGE WRITE;BULK ERASE NO YES 10000 Write/Erase Cycles 1 128000 131.072 k ASYNCHRONOUS 3-STATE 128 words PARALLEL 5 V 850 µA 120 µA 5.25 V 4.75 V CMOS INDUSTRIAL YES 5 ms R-CDIP-T32 Not Qualified e0 85 °C -40 °C 32 CERAMIC, METAL-SEALED COFIRED DIP DIP32,.6 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL SEEQ TECHNOLOGY INC DIP, DIP32,.6 unknown EAR99 8542.32.00.51
UX28C010H-250
 LSI Corporation 		Check for Price Obsolete 1.0486 Mbit 8 128KX8 5 V 250 ns EEPROM NO YES 10000 Write/Erase Cycles 128000 131.072 k 128 words PARALLEL 850 µA 120 µA CMOS YES 5 ms Not Qualified DIE OR CHIP SEEQ TECHNOLOGY INC , DIE OR CHIP unknown EAR99 8542.32.00.51
FM28C010H-200/B
 LSI Corporation 		Check for Price No Obsolete 1.0486 Mbit 8 128KX8 5 V 200 ns EEPROM 10000 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS NO YES 10 10000 Write/Erase Cycles 1 128000 131.072 k ASYNCHRONOUS 3-STATE 128 words PARALLEL 5 V 350 µA 120 µA 5.5 V 4.5 V CMOS MILITARY YES 5 ms R-CDFP-F32 Not Qualified e0 125 °C -55 °C 38535Q/M;38534H;883B 32 CERAMIC, METAL-SEALED COFIRED DFP FL32,.4 RECTANGULAR FLATPACK YES TIN LEAD FLAT 1.27 mm DUAL SEEQ TECHNOLOGY INC DFP, FL32,.4 unknown 3A001.A.2.C 8542.32.00.51
CM28C010H-200/B
 LSI Corporation 		Check for Price No Obsolete 1.0486 Mbit 8 128KX8 5 V 200 ns EEPROM AUTOMATIC WRITE;PAGE WRITE;BULK ERASE NO YES 10000 Write/Erase Cycles 1 128000 131.072 k ASYNCHRONOUS 3-STATE 128 words PARALLEL 5 V 850 µA 120 µA 5.25 V 4.75 V CMOS MILITARY YES 5 ms R-CDIP-T32 Not Qualified e0 125 °C -55 °C 38535Q/M;38534H;883B 32 CERAMIC, METAL-SEALED COFIRED DIP DIP32,.6 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL SEEQ TECHNOLOGY INC DIP, DIP32,.6 unknown 3A001.A.2.C 8542.32.00.51
28C010HPI-12
 Catalyst Semiconductor 		Check for Price No Obsolete 1.0486 Mbit 8 128KX8 5 V 120 ns EEPROM NO YES 100000 Write/Erase Cycles 128000 131.072 k 128 words PARALLEL 200 µA 40 µA CMOS INDUSTRIAL YES 5 ms R-PDIP-T32 Not Qualified e0 85 °C -40 °C 32 PLASTIC/EPOXY DIP DIP32,.6 RECTANGULAR IN-LINE NO Tin/Lead (Sn/Pb) THROUGH-HOLE 2.54 mm DUAL CATALYST SEMICONDUCTOR INC DIP, DIP32,.6 unknown EAR99 8542.32.00.51
28C010HN-15T
 Catalyst Semiconductor 		Check for Price No Obsolete 1.0486 Mbit 8 128KX8 5 V 150 ns EEPROM NO YES 100000 Write/Erase Cycles 128000 131.072 k 128 words PARALLEL 200 µA 40 µA CMOS COMMERCIAL YES 5 ms R-PQCC-J32 Not Qualified e0 70 °C 32 PLASTIC/EPOXY QCCJ LDCC32,.5X.6 RECTANGULAR CHIP CARRIER YES Tin/Lead (Sn/Pb) J BEND 1.27 mm QUAD CATALYST SEMICONDUCTOR INC QCCJ, LDCC32,.5X.6 unknown EAR99 8542.32.00.51
FM28C010H-120
 LSI Corporation 		Check for Price No Obsolete 1.0486 Mbit 8 128KX8 5 V 120 ns EEPROM NO YES 10000 Write/Erase Cycles 128000 131.072 k 128 words PARALLEL 850 µA 120 µA CMOS MILITARY YES 5 ms R-XDFP-F32 Not Qualified e0 125 °C -55 °C 32 CERAMIC DFP FL32,.4 RECTANGULAR FLATPACK YES Tin/Lead (Sn/Pb) FLAT 1.27 mm DUAL SEEQ TECHNOLOGY INC DFP, FL32,.4 unknown 3A001.A.2.C 8542.32.00.51
CAT28C010HTA-15T
 Catalyst Semiconductor 		Check for Price No Obsolete 1.0486 Mbit 8 128KX8 5 V 150 ns EEPROM NO YES 100000 Write/Erase Cycles 128000 131.072 k 128 words PARALLEL 200 µA 40 µA CMOS INDUSTRIAL YES 5 ms R-PDSO-G32 Not Qualified e0 105 °C -40 °C 32 PLASTIC/EPOXY TSSOP TSSOP32,.8,20 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES Tin/Lead (Sn/Pb) GULL WING 500 µm DUAL CATALYST SEMICONDUCTOR INC TSSOP, TSSOP32,.8,20 unknown EAR99 8542.32.00.51
CQ28C010H-200
 LSI Corporation 		Check for Price No Obsolete 1.0486 Mbit 8 128KX8 5 V 200 ns EEPROM AUTOMATIC WRITE;PAGE WRITE;BULK ERASE NO YES 10000 Write/Erase Cycles 1 128000 131.072 k ASYNCHRONOUS 128 words PARALLEL 5 V 850 µA 120 µA 5.25 V 4.75 V CMOS COMMERCIAL YES 5 ms R-CDIP-T32 Not Qualified e0 70 °C 32 CERAMIC, METAL-SEALED COFIRED DIP DIP32,.6 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL SEEQ TECHNOLOGY INC DIP, DIP32,.6 unknown EAR99 8542.32.00.51
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