Parametric results for: 2SB1016 under Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

ISOLATED 11

11 hits Apply

Collector Current-Max (IC) (1)

5 A 11

11 hits Apply

270 pF 4

11 hits Apply

Collector-Emitter Voltage-Max (1)

100 V 11

11 hits Apply

Configuration (1)

SINGLE 11

11 hits Apply

DC Current Gain-Min (hFE) (4)

20.0 3 40.0 2 70.0 3 120.0 3

Min - Max

11 hits Apply

TO-220AB 4

11 hits Apply

R-PSFM-T3 11

11 hits Apply

e0 2

11 hits Apply

Manufacturer (2)

Inchange Semiconductor Company Ltd 4 Toshiba America Electronic Components 7

11 hits Apply

Number of Elements (1)

1 11

11 hits Apply

Number of Terminals (1)

3 11

11 hits Apply

150.0 °C 7

11 hits Apply

PLASTIC/EPOXY 11

11 hits Apply

RECTANGULAR 11

11 hits Apply

FLANGE MOUNT 11

11 hits Apply

Contact Manufacturer 4 End Of Life 3 Obsolete 4

11 hits Apply

No 3

11 hits Apply

NOT SPECIFIED 2

11 hits Apply

Polarity/Channel Type (1)

PNP 11

11 hits Apply

30 W 3

11 hits Apply

30 W 7

11 hits Apply

Surface Mount (1)

NO 11

11 hits Apply

Transition Frequency-Nom (fT) (1)

5 MHz 11

11 hits Apply