Parametric results for: 2SB1224 under Power Bipolar Transistors

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT IN BIAS RESISTOR RATIO IS 0.03 11

11 hits Apply

ISOLATED 11

11 hits Apply

Collector Current-Max (IC) (1)

7 A 11

11 hits Apply

Collector-Emitter Voltage-Max (1)

60 V 11

11 hits Apply

Configuration (1)

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 11

11 hits Apply

DC Current Gain-Min (hFE) (1)

2000.0 11

11 hits Apply

R-PSFM-T3 11

11 hits Apply

Manufacturer (3)

onsemi 1 SANYO Electric Co Ltd 5 SANYO Semiconductor Co Ltd 5

11 hits Apply

Number of Elements (1)

1 11

11 hits Apply

Number of Terminals (1)

3 11

11 hits Apply

150.0 °C 2

11 hits Apply

PLASTIC/EPOXY 11

11 hits Apply

RECTANGULAR 11

11 hits Apply

FLANGE MOUNT 11

11 hits Apply

Obsolete 5 Transferred 6

11 hits Apply

Polarity/Channel Type (1)

PNP 11

11 hits Apply

25 W 5

11 hits Apply

25 W 1

11 hits Apply

Surface Mount (1)

NO 11

11 hits Apply

Transition Frequency-Nom (fT) (1)

20 MHz 11

11 hits Apply