Parametric results for: 2SJ336 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

DRAIN 1

5 hits Apply

Configuration (1)

SINGLE 5

5 hits Apply

DS Breakdown Voltage-Min (1)

12 V 4

5 hits Apply

Drain Current-Max (ID) (1)

2 A 5

5 hits Apply

Drain-source On Resistance-Max (1)

350 mΩ 4

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

TO-251 1 TO-252 1

5 hits Apply

R-PSIP-T3 3 R-PSSO-G2 1

5 hits Apply

Manufacturer (2)

onsemi 1 SANYO Electric Co Ltd 4

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (2)

2 1 3 3

5 hits Apply

DEPLETION MODE 1 ENHANCEMENT MODE 4

5 hits Apply

PLASTIC/EPOXY 4

5 hits Apply

RECTANGULAR 4

5 hits Apply

IN-LINE 3 SMALL OUTLINE 1

5 hits Apply

Active 1 Obsolete 4

5 hits Apply

Polarity/Channel Type (2)

N-CHANNEL 1 P-CHANNEL 4

5 hits Apply

20 W 1

5 hits Apply

20 W 2

5 hits Apply

Surface Mount (2)

NO 4 YES 1

5 hits Apply