Parametric results for: 2SJ610 under Other Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

180.0 mJ 5

6 hits Apply

DRAIN 5

6 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 5

6 hits Apply

DS Breakdown Voltage-Min (1)

250 V 5

6 hits Apply

Drain Current-Max (ID) (1)

2 A 6

6 hits Apply

Drain-source On Resistance-Max (1)

2.55 Ω 5

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

52 pF 2

6 hits Apply

R-PSIP-T3 2 R-PSSO-G2 3

6 hits Apply

e0 2

6 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 6

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (2)

2 3 3 2

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 4

6 hits Apply

PLASTIC/EPOXY 5

6 hits Apply

RECTANGULAR 5

6 hits Apply

IN-LINE 2 SMALL OUTLINE 3

6 hits Apply

End Of Life 2 Lifetime Buy 2 Obsolete 2

6 hits Apply

No 3

6 hits Apply

NOT SPECIFIED 2

6 hits Apply

Polarity/Channel Type (2)

N-CHANNEL 1 P-CHANNEL 5

6 hits Apply

20 W 2

6 hits Apply

20 W 4

6 hits Apply

Surface Mount (2)

NO 2 YES 4

6 hits Apply