Parametric results for: 2sk897 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

ISOLATED 2

4 hits Apply

Configuration (2)

SINGLE 3 SINGLE WITH BUILT-IN DIODE 1

4 hits Apply

DS Breakdown Voltage-Min (1)

550 V 2

4 hits Apply

Drain Current-Max (ID) (1)

4 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

1.5 Ω 2

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

TO-220AB 2

4 hits Apply

R-PSFM-T3 2

4 hits Apply

e0 1

4 hits Apply

Manufacturer (1)

Fuji Electric Co Ltd 4

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

3 2

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 2

4 hits Apply

PLASTIC/EPOXY 2

4 hits Apply

RECTANGULAR 2

4 hits Apply

FLANGE MOUNT 2

4 hits Apply

Active 1 Obsolete 3

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

40 W 1

4 hits Apply

40 W 3

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply