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71321LA25JGI8
Integrated Device Technology Inc
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$11.0565 | Yes | Yes | Transferred | 16.384 kbit | 8 | 2KX8 | 5 V | 25 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4 mA | 2 V | 220 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | S-PQCC-J52 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | 30 | 52 | PLASTIC/EPOXY | QCCJ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 4.572 mm | 19.1262 mm | 19.1262 mm | INTEGRATED DEVICE TECHNOLOGY INC | PLCC | PLASTIC, LCC-52 | 52 | PLG52 | compliant | EAR99 | 8542.32.00.41 | 1988-01-01 | ||||
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71321LA25JGI
Integrated Device Technology Inc
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$12.9262 | Yes | Yes | Transferred | 16.384 kbit | 8 | 2KX8 | 5 V | 25 ns | MULTI-PORT SRAM | AUTOMATIC POWER DOWN | COMMON | 1 | 2 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4 mA | 2 V | 220 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | S-PQCC-J52 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | 30 | 52 | PLASTIC/EPOXY | QCCJ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 4.572 mm | 19.1262 mm | 19.1262 mm | INTEGRATED DEVICE TECHNOLOGY INC | PLCC | 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, GREEN, PLASTIC, LCC-52 | 52 | PLG52 | compliant | EAR99 | 8542.32.00.41 | 1988-01-01 | |||
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71321LA25JGI
Renesas Electronics Corporation
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$27.5388 | Yes | Yes | Active | 16.384 kbit | 8 | 2KX8 | 5 V | 25 ns | MULTI-PORT SRAM | AUTOMATIC POWER DOWN | COMMON | 1 | 2 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4 mA | 2 V | 220 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | S-PQCC-J52 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | 30 | 52 | PLASTIC/EPOXY | QCCJ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 4.572 mm | 19.1262 mm | 19.1262 mm | RENESAS ELECTRONICS CORP | PLCC | 52 | PLG52 | compliant | NLR | 8542320041 | Renesas Electronics | ||||
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IDT71321LA25JGI8
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 16.384 kbit | 8 | 2KX8 | 5 V | 25 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4 mA | 2 V | 220 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | S-PQCC-J52 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | 30 | 52 | PLASTIC/EPOXY | QCCJ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | Matte Tin (Sn) - annealed | J BEND | 1.27 mm | QUAD | 4.572 mm | 19.1262 mm | 19.1262 mm | INTEGRATED DEVICE TECHNOLOGY INC | LCC | QCCJ, LDCC52,.8SQ | 52 | compliant | EAR99 | 8542.32.00.41 | 1988-01-01 | |||||
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IDT71321LA25JGI
Integrated Device Technology Inc
|
Check for Price | Yes | Yes | Transferred | 16.384 kbit | 8 | 2KX8 | 5 V | 25 ns | MULTI-PORT SRAM | AUTOMATIC POWER DOWN | COMMON | 1 | 2 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4 mA | 2 V | 220 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | S-PQCC-J52 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | 30 | 52 | PLASTIC/EPOXY | QCCJ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | Matte Tin (Sn) - annealed | J BEND | 1.27 mm | QUAD | 4.572 mm | 19.1262 mm | 19.1262 mm | INTEGRATED DEVICE TECHNOLOGY INC | LCC | QCCJ, LDCC52,.8SQ | 52 | compliant | EAR99 | 8542.32.00.41 | 1988-01-01 | ||||
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71321LA25JGI8
Renesas Electronics Corporation
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Check for Price | Yes | Yes | Active | 16.384 kbit | 8 | 2KX8 | 5 V | 25 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4 mA | 2 V | 220 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | S-PQCC-J52 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | 30 | 52 | PLASTIC/EPOXY | QCCJ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 4.572 mm | 19.1262 mm | 19.1262 mm | RENESAS ELECTRONICS CORP | PLCC | PLASTIC, LCC-52 | 52 | PLG52 | compliant | NLR | 8542320041 | Renesas Electronics |