Parametric results for: AM0912-080 under RF Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount

BASE 2

2 hits Apply

Collector Current-Max (IC) (1)

7 A 2

2 hits Apply

Configuration (1)

SINGLE 2

2 hits Apply

DC Current Gain-Min (hFE) (1)

20.0 2

2 hits Apply

Highest Frequency Band (1)

L BAND 2

2 hits Apply

R-CDFM-F2 1 S-CDFM-F2 1

2 hits Apply

Manufacturer (2)

Advanced Semiconductor Inc 1 STMicroelectronics 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

2 2

2 hits Apply

200.0 °C 1 250.0 °C 1

Min (°C) - Max (°C)

2 hits Apply

CERAMIC, METAL-SEALED COFIRED 2

2 hits Apply

RECTANGULAR 1 SQUARE 1

2 hits Apply

FLANGE MOUNT 2

2 hits Apply

Active 1 Obsolete 1

2 hits Apply

Polarity/Channel Type (1)

NPN 2

2 hits Apply

220 W 2

2 hits Apply

Power Gain-Min (Gp) (1)

8.4 dB 1

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply