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AM29DL162DT120WCE
AMD
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Check for Price | No | Transferred | 16.7772 Mbit | 16 | 8K,64K | 1MX16 | 3 V | 120 ns | FLASH | 20 YEAR DATA RETENTION | 8 | TOP | YES | YES | YES | 20 | 1 | 8,31 | 1000000 | 1.0486 M | ASYNCHRONOUS | PARALLEL | 3 V | YES | 5 µA | 45 µA | 3.6 V | 2.7 V | CMOS | MILITARY | YES | NOR TYPE | R-PBGA-B48 | Not Qualified | e0 | 125 °C | -55 °C | 48 | PLASTIC/EPOXY | TFBGA | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 800 µm | BOTTOM | 1.2 mm | 9 mm | 8 mm | ADVANCED MICRO DEVICES INC | BGA | TFBGA, BGA48,6X8,32 | 48 | unknown | 3A001.A.2.C | 8542.32.00.51 | ||||
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AM29DL162DT120WCEN
AMD
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Check for Price | No | Obsolete | 16.7772 Mbit | 16 | 8K,64K | 1MX16 | 120 ns | FLASH | 8 | TOP | YES | YES | YES | 8,31 | 1000000 | 1.0486 M | PARALLEL | YES | 5 µA | 45 µA | CMOS | MILITARY | YES | NOR TYPE | R-PBGA-B48 | Not Qualified | e0 | 125 °C | -55 °C | 48 | PLASTIC/EPOXY | FBGA | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 800 µm | BOTTOM | ADVANCED MICRO DEVICES INC | FBGA, BGA48,6X8,32 | unknown | 3A001.A.2.C | 8542.32.00.51 | |||||||||||||||||
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AM29DL162DT120WCE
Spansion
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Check for Price | No | Obsolete | 16.7772 Mbit | 16 | 1MX16 | 3 V | 120 ns | FLASH | 20 YEAR DATA RETENTION | 8 | TOP | 20 | 1 | 1000000 | 1.0486 M | ASYNCHRONOUS | PARALLEL | 3 V | 3.6 V | 2.7 V | CMOS | MILITARY | NOR TYPE | R-PBGA-B48 | Not Qualified | e0 | 3 | 125 °C | -55 °C | 260 | 48 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 800 µm | BOTTOM | 1.2 mm | 9 mm | 8 mm | SPANSION INC | BGA | TFBGA, | 48 | compliant | 3A001.A.2.C | 8542.32.00.51 |