Parametric results for: APT5010JLL under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 6

9 hits Apply

1600.0 mJ 9

9 hits Apply

ISOLATED 9

9 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 9

9 hits Apply

DS Breakdown Voltage-Min (1)

500 V 9

9 hits Apply

Drain Current-Max (ID) (1)

41 A 9

9 hits Apply

Drain-source On Resistance-Max (1)

100 mΩ 9

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 9

9 hits Apply

R-PUFM-X4 5 R-XUFM-X4 4

9 hits Apply

e1 2

9 hits Apply

Manufacturer (3)

Advanced Power Technology 3 Microchip Technology Inc 3 Microsemi Corporation 3

9 hits Apply

Number of Elements (1)

1 9

9 hits Apply

Number of Terminals (1)

4 9

9 hits Apply

ENHANCEMENT MODE 9

9 hits Apply

150.0 °C 7

9 hits Apply

PLASTIC/EPOXY 5 UNSPECIFIED 4

9 hits Apply

RECTANGULAR 9

9 hits Apply

FLANGE MOUNT 9

9 hits Apply

Active 3 Transferred 6

9 hits Apply

Yes 3

9 hits Apply

NOT SPECIFIED 7

9 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 9

9 hits Apply

378 W 4 446 W 3

Min (W) - Max (W)

9 hits Apply

Surface Mount (1)

NO 9

9 hits Apply