Parametric results for: APT5010JN under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

ISOLATED 2

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

3 hits Apply

DS Breakdown Voltage-Min (1)

500 V 2

3 hits Apply

Drain Current-Max (ID) (1)

48 A 2

3 hits Apply

Drain-source On Resistance-Max (1)

100 mΩ 2

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

3 hits Apply

660 pF 2

3 hits Apply

R-PUFM-X4 2

3 hits Apply

Manufacturer (3)

Advanced Power Technology 1 Microchip Technology Inc 1 Microsemi Corporation 1

3 hits Apply

Number of Elements (1)

1 2

3 hits Apply

Number of Terminals (1)

4 2

3 hits Apply

ENHANCEMENT MODE 2

3 hits Apply

150.0 °C 2

3 hits Apply

PLASTIC/EPOXY 2

3 hits Apply

RECTANGULAR 2

3 hits Apply

FLANGE MOUNT 2

3 hits Apply

Active 1 Obsolete 2

3 hits Apply

NOT SPECIFIED 2

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

3 hits Apply

520 W 2

3 hits Apply

520 W 2

3 hits Apply

Surface Mount (1)

NO 2

3 hits Apply