Parametric results for: BFG410W under Other Transistors

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

LOW NOISE 1

3 hits Apply

EMITTER 1

3 hits Apply

Collector Current-Max (IC) (1)

12 mA 3

3 hits Apply

Collector-Emitter Voltage-Max (1)

4.5 V 1

3 hits Apply

Configuration (1)

SINGLE 3

3 hits Apply

DC Current Gain-Min (hFE) (1)

50.0 3

3 hits Apply

Highest Frequency Band (1)

L BAND 1

3 hits Apply

R-PDSO-G4 1

3 hits Apply

e3 3

3 hits Apply

Manufacturer (2)

NXP Semiconductors 2 Philips Semiconductors 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

4 1

3 hits Apply

150.0 °C 3

3 hits Apply

PLASTIC/EPOXY 1

3 hits Apply

RECTANGULAR 1

3 hits Apply

SMALL OUTLINE 1

3 hits Apply

Obsolete 2 Transferred 1

3 hits Apply

260 3

3 hits Apply

Polarity/Channel Type (1)

NPN 3

3 hits Apply

54 mW 1

3 hits Apply

54 mW 3

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply

Transition Frequency-Nom (fT) (1)

22 GHz 1

3 hits Apply