Parametric results for: BUK456100A under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

DRAIN 4

6 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 4

6 hits Apply

DS Breakdown Voltage-Min (1)

100 V 4

6 hits Apply

Drain Current-Max (ID) (1)

34 A 6

6 hits Apply

Drain-source On Resistance-Max (1)

57 mΩ 4

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

200 pF 2

6 hits Apply

TO-220AB 4

6 hits Apply

R-PSFM-T3 4

6 hits Apply

e0 2

6 hits Apply

Manufacturer (3)

North American Philips Discrete Products Div 1 NXP Semiconductors 4 Philips Semiconductors 1

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

3 4

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 2 175.0 °C 4

Min (°C) - Max (°C)

6 hits Apply

PLASTIC/EPOXY 4

6 hits Apply

RECTANGULAR 4

6 hits Apply

FLANGE MOUNT 4

6 hits Apply

Obsolete 4 Transferred 2

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

150 W 2

6 hits Apply

150 W 3

6 hits Apply

Surface Mount (1)

NO 6

6 hits Apply