Parametric results for: BUZ101 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 5 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 2 LOGIC LEVEL COMPATIBLE 2 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED 6

16 hits Apply

70.0 mJ 5 90.0 mJ 9

Min (mJ) - Max (mJ)

16 hits Apply

Configuration (3)

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE 2 SINGLE 2 SINGLE WITH BUILT-IN DIODE 12

16 hits Apply

DS Breakdown Voltage-Min (2)

50 V 5 55 V 11

Min (V) - Max (V)

16 hits Apply

Drain Current-Max (ID) (6)

4.1 A 2 20 A 4 21 A 1 22 A 3 23 A 1 29 A 5

Min (A) - Max (A)

16 hits Apply

Drain-source On Resistance-Max (4)

50 mΩ 3 60 mΩ 6 70 mΩ 5 75 mΩ 2

Min (Ω) - Max (Ω)

16 hits Apply

METAL-OXIDE SEMICONDUCTOR 16

16 hits Apply

135 pF 1 150 pF 1

Min (pF) - Max (pF)

16 hits Apply

TO-220AB 10 TO-263AB 4

16 hits Apply

R-PDSO-G28 2 R-PSFM-T3 10 R-PSSO-G2 4

16 hits Apply

e0 6 e3 2

16 hits Apply

Manufacturer (3)

Infineon Technologies AG 9 Rochester Electronics LLC 2 Siemens 5

16 hits Apply

Number of Elements (2)

1 14 4 2

Min - Max

16 hits Apply

Number of Terminals (3)

2 4 28 2 3 10

16 hits Apply

ENHANCEMENT MODE 16

16 hits Apply

175.0 °C 11

16 hits Apply

PLASTIC/EPOXY 16

16 hits Apply

RECTANGULAR 16

16 hits Apply

FLANGE MOUNT 10 SMALL OUTLINE 6

16 hits Apply

Active 2 Obsolete 9 Transferred 5

16 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 16

16 hits Apply

100 W 2

16 hits Apply

9.6 W 1 55 W 6 100 W 2

Min (W) - Max (W)

16 hits Apply

Surface Mount (2)

NO 10 YES 6

16 hits Apply