Parametric results for: BUZ111SL under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 3 LOGIC LEVEL COMPATIBLE 1

4 hits Apply

700.0 mJ 3

4 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 3

4 hits Apply

DS Breakdown Voltage-Min (1)

55 V 4

4 hits Apply

Drain Current-Max (ID) (1)

80 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

10 mΩ 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

TO-220AB 2 TO-263AB 2

4 hits Apply

R-PSFM-T3 2 R-PSSO-G2 2

4 hits Apply

e0 2

4 hits Apply

Manufacturer (2)

Infineon Technologies AG 3 Siemens 1

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (2)

2 2 3 2

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

175.0 °C 3

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

FLANGE MOUNT 2 SMALL OUTLINE 2

4 hits Apply

Obsolete 3 Transferred 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

300 W 3

4 hits Apply

Surface Mount (2)

NO 2 YES 2

4 hits Apply