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Parametric » Memory » EEPROMs

Parametric results for: DS28E02Q+T&R under EEPROMs

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Select Parts		Part Number

		DS28E02Q+T&R Analog Devices Inc
		DS28E02Q+T&R Maxim Integrated Products

				Most Relevant				Technical													Compliance			Operating Conditions					Physical											Dimensions			Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Organization	Supply Voltage-Nom (Vsup)	Memory IC Type	Data Retention Time-Min	Endurance	Number of Functions	Number of Words Code	Number of Words	Operating Mode	Parallel/Serial	Serial Bus Type	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	JESD-30 Code	Qualification Status	JESD-609 Code	Moisture Sensitivity Level	Operating Temperature-Max	Operating Temperature-Min	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Part Package Code	Pin Count	Manufacturer Package Code	Date Of Intro	Samacsys Manufacturer	Ihs Manufacturer	Package Description	Reach Compliance Code	ECCN Code	HTS Code

Check for Price

Yes

Active

1.024 kbit

1

1KX1

1.8 V

EEPROM

40

50000 Write/Erase Cycles

1

1000

1.024 k

ASYNCHRONOUS

SERIAL

1-WIRE

3.65 V

1.75 V

CMOS

OTHER

S-PDSO-N6

Not Qualified

e3

1

85 °C

-20 °C

260

30

6

PLASTIC/EPOXY

HVSON

SOLCC6,.11,37

SQUARE

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

YES

Matte Tin (Sn) - annealed

NO LEAD

950 µm

DUAL

800 µm

3 mm

3 mm

6-LFCSP-3X3X0.75

6

6-LFCSP-3X3X0.75

2010-07-22

Analog Devices

Check for Price

Yes

Yes

Transferred

1.024 kbit

1

1KX1

1.8 V

EEPROM

40

50000 Write/Erase Cycles

1

1000

1.024 k

ASYNCHRONOUS

SERIAL

1-WIRE

3.65 V

1.75 V

CMOS

OTHER

S-PDSO-N6

Not Qualified

e3

1

85 °C

-20 °C

260

30

6

PLASTIC/EPOXY

HVSON

SOLCC6,.11,37

SQUARE

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

YES

MATTE TIN

NO LEAD

950 µm

DUAL

800 µm

3 mm

3 mm

DFN

6

MAXIM INTEGRATED PRODUCTS INC

HVSON, SOLCC6,.11,37

compliant

EAR99

8542.32.00.51

Compare

Analog Devices Inc

Check for Price

Yes

Active

1.024 kbit

1

1KX1

1.8 V

EEPROM

40

50000 Write/Erase Cycles

1

1000

1.024 k

ASYNCHRONOUS

SERIAL

1-WIRE

3.65 V

1.75 V

CMOS

OTHER

S-PDSO-N6

Not Qualified

e3

1

85 °C

-20 °C

260

30

6

PLASTIC/EPOXY

HVSON

SOLCC6,.11,37

SQUARE

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

YES

Matte Tin (Sn) - annealed

NO LEAD

950 µm

DUAL

800 µm

3 mm

3 mm

6-LFCSP-3X3X0.75

6

6-LFCSP-3X3X0.75

2010-07-22

Analog Devices

Maxim Integrated Products

Check for Price

Yes

Yes

Transferred

1.024 kbit

1

1KX1

1.8 V

EEPROM

40

50000 Write/Erase Cycles

1

1000

1.024 k

ASYNCHRONOUS

SERIAL

1-WIRE

3.65 V

1.75 V

CMOS

OTHER

S-PDSO-N6

Not Qualified

e3

1

85 °C

-20 °C

260

30

6

PLASTIC/EPOXY

HVSON

SOLCC6,.11,37

SQUARE

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

YES

MATTE TIN

NO LEAD

950 µm

DUAL

800 µm

3 mm

3 mm

DFN

6

MAXIM INTEGRATED PRODUCTS INC

HVSON, SOLCC6,.11,37

compliant

EAR99

8542.32.00.51