Parametric results for: EPC2015C under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Configuration (1)

SINGLE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

40 V 1

1 hit Apply

Drain Current-Max (ID) (1)

36 A 1

1 hit Apply

Drain-source On Resistance-Max (1)

4 mΩ 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

R-XXUC-X11 1

1 hit Apply

e2 1

1 hit Apply

Manufacturer (1)

Efficient Power Conversion 1

1 hit Apply

1 1

1 hit Apply

Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

11 1

1 hit Apply

ENHANCEMENT MODE 1

1 hit Apply

UNSPECIFIED 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

UNCASED CHIP 1

1 hit Apply

Contact Manufacturer 1

1 hit Apply

260 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply