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Parametric » Transistors » Power Field-Effect Transistors

Parametric results for: FDP55N06 under Power Field-Effect Transistors

Select parts from the table below to compare.

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Select Parts		Part Number

		FDP55N06 Fairchild Semiconductor Corporation
		FDP55N06 onsemi
		FDP55N06 Rochester Electronics LLC

				Most Relevant								Technical								Compliance				Operating Conditions				Physical						Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Polarity/Channel Type	Surface Mount	Configuration	Number of Terminals	DS Breakdown Voltage-Min	Number of Elements	Drain Current-Max (ID)	Drain-source On Resistance-Max	Additional Feature	Avalanche Energy Rating (Eas)	FET Technology	Operating Mode	Power Dissipation-Max (Abs)	Pulsed Drain Current-Max (IDM)	Transistor Application	Transistor Element Material	JEDEC-95 Code	JESD-30 Code	JESD-609 Code	Qualification Status	Moisture Sensitivity Level	Operating Temperature-Max	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Package Body Material	Package Shape	Package Style	Terminal Finish	Terminal Form	Terminal Position	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Manufacturer Package Code	Reach Compliance Code	ECCN Code	HTS Code	Samacsys Manufacturer

Yes

Yes

Transferred

N-CHANNEL

NO

SINGLE WITH BUILT-IN DIODE

3

60 V

1

55 A

22 mΩ

AVALANCHE RATED

480 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

114 W

220 A

SWITCHING

SILICON

TO-220AB

R-PSFM-T3

e3

Not Qualified

150 °C

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

MATTE TIN

THROUGH-HOLE

SINGLE

FAIRCHILD SEMICONDUCTOR CORP

TO-220

TO-220, 3 PIN

3

TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB

compliant

EAR99

8541.29.00.95

Yes

Obsolete

N-CHANNEL

NO

SINGLE WITH BUILT-IN DIODE

3

60 V

1

55 A

22 mΩ

AVALANCHE RATED

480 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

114 W

220 A

SWITCHING

SILICON

TO-220AB

R-PSFM-T3

e3

Not Qualified

150 °C

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

MATTE TIN

THROUGH-HOLE

SINGLE

ONSEMI

TO-220, 3 PIN

340AT

not_compliant

EAR99

onsemi

Check for Price

Yes

Yes

Active

N-CHANNEL

NO

SINGLE WITH BUILT-IN DIODE

3

60 V

1

55 A

22 mΩ

AVALANCHE RATED

480 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

220 A

SWITCHING

SILICON

TO-220AB

R-PSFM-T3

e3

COMMERCIAL

NOT APPLICABLE

NOT SPECIFIED

NOT SPECIFIED

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

MATTE TIN

THROUGH-HOLE

SINGLE

ROCHESTER ELECTRONICS LLC

TO-220AB

TO-220, 3 PIN

3

unknown

Compare

Fairchild Semiconductor Corporation

Yes

Yes

Transferred

N-CHANNEL

NO

SINGLE WITH BUILT-IN DIODE

3

60 V

1

55 A

22 mΩ

AVALANCHE RATED

480 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

114 W

220 A

SWITCHING

SILICON

TO-220AB

R-PSFM-T3

e3

Not Qualified

150 °C

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

MATTE TIN

THROUGH-HOLE

SINGLE

FAIRCHILD SEMICONDUCTOR CORP

TO-220

TO-220, 3 PIN

3

TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB

compliant

EAR99

8541.29.00.95

onsemi

Yes

Obsolete

N-CHANNEL

NO

SINGLE WITH BUILT-IN DIODE

3

60 V

1

55 A

22 mΩ

AVALANCHE RATED

480 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

114 W

220 A

SWITCHING

SILICON

TO-220AB

R-PSFM-T3

e3

Not Qualified

150 °C

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

MATTE TIN

THROUGH-HOLE

SINGLE

ONSEMI

TO-220, 3 PIN

340AT

not_compliant

EAR99

onsemi

Rochester Electronics LLC

Check for Price

Yes

Yes

Active

N-CHANNEL

NO

SINGLE WITH BUILT-IN DIODE

3

60 V

1

55 A

22 mΩ

AVALANCHE RATED

480 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

220 A

SWITCHING

SILICON

TO-220AB

R-PSFM-T3

e3

COMMERCIAL

NOT APPLICABLE

NOT SPECIFIED

NOT SPECIFIED

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

MATTE TIN

THROUGH-HOLE

SINGLE

ROCHESTER ELECTRONICS LLC

TO-220AB

TO-220, 3 PIN

3

unknown